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參數(shù)資料
| 型號： | STB4NB80 |
| 廠商： | 意法半導體 |
| 英文描述： | N-Channel 800V-3Ω-4A- TO-220/TO-220FP PowerMESHTM MOSFET(N溝道MOSFET) |
| 中文描述： | N溝道800V的-3Ω- 4A條，TO-220/TO-220FP PowerMESHTM MOSFET的（不適用溝道MOSFET的） |
| 文件頁數(shù)： | 2/6頁 |
| 文件大?。?/td> | 53K |
| 代理商： | STB4NB80 |
THERMAL DATA
TO-263
TO-262
R
thj-case
Thermal Resistance Junction-case Max
1
3.6
o
C/W
o
C/W
o
C/W
o
C
R
thj-amb
R
thc-sink
T
l
Thermal Resistance Junction-ambient Max
Thermal Resistance Case-sink Typ
Maximum Lead Temperature For Soldering Purpose
62.5
0.5
300
AVALANCHE CHARACTERISTICS
Symbol
Parameter
Max Value
Unit
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
Single Pulse Avalanche Energy
(starting T
j
= 25
o
C, I
D
= I
AR
, V
DD
= 50 V)
4
A
E
AS
230
mJ
ELECTRICAL CHARACTERISTICS
(T
case
= 25
o
C unless otherwise specified)
OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
(BR)DSS
Drain-source
Breakdown Voltage
Zero Gate Voltage
Drain Current (V
GS
= 0)
I
D
= 250
μ
A V
GS
= 0
800
V
I
DSS
V
DS
= Max Rating
V
DS
= Max Rating T
c
= 125
o
C
1
50
μ
A
μ
A
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS
=
±
30 V
±
100
nA
ON (
)
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
V
GS(th)
Gate Threshold
Voltage
Static Drain-source On
Resistance
On State Drain Current V
DS
> I
D(on)
x R
DS(on)max
V
DS
= V
GS
I
D
= 250
μ
A
3
4
5
V
R
DS(on)
V
GS
= 10V I
D
= 2 A
3
3.3
I
D(on)
V
GS
= 10 V
4
A
DYNAMIC
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
g
fs
(
)
Forward
Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
V
DS
> I
D(on)
x R
DS(on)max
I
D
= 2 A
1.8
S
C
iss
C
oss
C
rss
V
DS
= 25 V f = 1 MHz V
GS
= 0
700
95
9
920
126
12
pF
pF
pF
STB4NB80
2/6
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相關代理商/技術參數(shù) |
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| STB4NB80-1 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 800V V(BR)DSS | 4A I(D) | TO-262AA |
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| STB4NB80T4 | 功能描述:MOSFET N-Ch 800 Volt 4 Amp RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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| STB4NC60 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 600V - 1.8ohm - 4.2A D2PAK PowerMesh⑩II MOSFET |
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