參數(shù)資料
型號: STB22NS25Z
廠商: 意法半導(dǎo)體
英文描述: N-CHANNEL 250V - 0.13ohm - 22A TO-220/D2PAK Zener-Protected MESH OVERLAY⑩ MOSFET
中文描述: N溝道250V - 0.13ohm - 22A條TO-220/D2PAK齊保護(hù)的網(wǎng)格密胺⑩MOSFET的
文件頁數(shù): 2/10頁
文件大?。?/td> 449K
代理商: STB22NS25Z
STP22NS25Z / STB22NS25Z
2/10
THERMAL DATA
Rthj-case
Rthj-amb
T
l
AVALANCHE CHARACTERISTICS
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25 °C, I
D
= I
AR
, V
DD
= 50 V, R
g
= 47 Ohm)
ELECTRICAL CHARACTERISTICS
(TCASE
= 25 °C UNLESS OTHERWISE SPECIFIED)
OFF
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125 °C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
ON
(1)
Symbol
V
GS(th)
R
DS(on)
DYNAMIC
Symbol
g
fs
(1)
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.93
62.5
°C/W
°C/W
Maximum Lead Temperature For Soldering Purpose
300
°C
Parameter
Max Value
22
Unit
A
350
mJ
Test Conditions
I
D
= 250 μA, V
GS
= 0
Min.
250
Typ.
Max.
Unit
V
V
DS
= Max Rating
10
μA
100
μA
V
GS
= ±18V
±10
μA
Parameter
Test Conditions
V
DS
= V
GS
, I
D
= 250μA
V
GS
= 10V, I
D
= 11 A
Min.
Typ.
Max.
Unit
Gate Threshold Voltage
2
3
4
V
Static Drain-source On
Resistance
0.13
0.15
Parameter
Test Conditions
V
DS
> I
D(on)
x R
DS(on)max,
I
D
= 11A
V
DS
= 25V, f = 1 MHz, V
GS
= 0
Min.
Typ.
22
Max.
Unit
S
Forward Transconductance
C
iss
C
oss
C
rss
Input Capacitance
2400
pF
Output Capacitance
340
pF
Reverse Transfer
Capacitance
120
pF
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