- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382555 > STB19NB20 (意法半導(dǎo)體) N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) PDF資料下載
參數(shù)資料
| 型號： | STB19NB20 |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-Channel Enhancement Mode PowerMESHTM MOSFET(N溝道增強(qiáng)模式MOSFET) |
| 中文描述： | N溝道增強(qiáng)模式PowerMESHTM MOSFET的（不適用溝道增強(qiáng)模式MOSFET的） |
| 文件頁數(shù)： | 6/6頁 |
| 文件大?。?/td> | 60K |
| 代理商： | STB19NB20 |
Informationfurnished is believed to be accurate and reliable.However, SGS-THOMSON Microelectronics assumes no responsabilityfor the
consequencesof use of such informationnor for any infringementof patents or other rightsof third partieswhich may results fromits use.No
license is granted byimplicationor otherwiseunder anypatentor patentrights ofSGS-THOMSONMicroelectronics. Specificationsmentioned
in thispublicationare subject tochange without notice. This publicationsupersedesand replacesall information previously supplied.
SGS-THOMSON Microelectronicsproducts are notauthorizedfor useascriticalcomponentsinlifesupportdevicesor systemswithoutexpress
written approvalof SGS-THOMSONMicroelectonics.
1997 SGS-THOMSON Microelectronics -Printed in Italy- All Rights Reserved
SGS-THOMSON MicroelectronicsGROUP OF COMPANIES
Australia- Brazil - Canada- China- France- Germany- Hong Kong - Italy- Japan- Korea -Malaysia -Malta - Morocco - The Netherlands-
Singapore - Spain- Sweden - Switzerland - Taiwan - Thailand- UnitedKingdom- U.S.A
. ..
STB19NB20
6/6
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| STB22NE03L | N - CHANNEL 30V - 0.034ohm - 22A TO-263 STripFET] POWER MOSFET |
| STB3NC60 | N - CHANNEL 600V - 3.3ohm- 3A - D2PAK/I2PAK PowerMESHII MOSFET |
| STB40NE03L-20 | N - CHANNEL ENHANCEMENT MODE ” SINGLE FEATURE SIZE ” POWER MOSFET |
| STB4NB50 | N-Channel 500V-2.5Ω-3.8A-D2PAK/I2PAK PowerMESH MOSFET(N溝道MOSFET) |
| STB4NB80FP | N - CHANNEL 800V - 3ohm - 4A - TO-220/TO-220FP PowerMESHO MOSFET |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| STB19NB20-1 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-CHANNEL 200V - 0.15ohm - 19A - TO-220/TO-220FP/I2PAK PowerMESH⑩ MOSFET |
| STB19NF20 | 功能描述:MOSFET 200V 0.15Ohm 15A N-Channel RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NM65N | 功能描述:MOSFET N-Channel 650V 0.25 Ohms 15.5A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| STB19NM65NT4 | 制造商:STMICROELECTRONICS 制造商全稱:STMicroelectronics 功能描述:N-channel 650 V - 0.25 Ω - 15.5 A - TO-220/FP-D2/I2PAK-TO-247 second generation MDmesh? Power MOSFET |
| STB1GA14 | 制造商:n/a 功能描述:Ships in 2 days |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。