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參數(shù)資料
| 型號(hào)： | STB16NK65Z-S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET |
| 中文描述： | N溝道?650V - 0.38OHM - 13A條至220 I2SPAK齊納- MOSFET的保護(hù)SuperMESH |
| 文件頁(yè)數(shù)： | 3/12頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | STB16NK65Z-S |
3/12
STP16NK65Z - STB16NK65Z-S
ELECTRICAL CHARACTERISTICS
(T
CASE
=25
°
C UNLESS OTHERWISE SPECIFIED)
Table 7: On/Off
Symbol
Parameter
V
(BR)DSS
Drain-source
Breakdown Voltage
I
DSS
Zero Gate Voltage
Drain Current (V
GS
= 0)
V
DS
= Max Rating, T
C
= 125
°
C
I
GSS
Gate-body Leakage
Current (V
DS
= 0)
V
GS(th)
Gate Threshold Voltage
V
DS
= V
GS
, I
D
= 100 μA
R
DS(on)
Static Drain-source On
Resistance
Table 8: Dynamic
Symbol
g
fs
(1)
C
iss
C
oss
C
rss
Table 9: Source Drain Diode
Symbol
I
SD
I
SDM
(2)
Source-drain Current (pulsed)
V
SD
(1)
Forward On Voltage
t
rr
Q
rr
I
RRM
Reverse Recovery Current
t
rr
Q
rr
I
RRM
Reverse Recovery Current
(1) Pulsed: Pulse duration = 300μs, duty cycle 1.5%
(2) Pulse width limited by safe operating area
(*) C
oss eq.
is defined as a constant equivalent capacitance giving the same charging time as C
oss
when V
DS
increases from 0 to 80% V
DSS
Test Conditions
I
D
= 1 mA, V
GS
= 0
Min.
650
Typ.
Max.
Unit
V
V
DS
= Max Rating
1
50
μA
μA
V
GS
= ± 20 V
±10
μA
3
3.75
4.5
V
V
GS
= 10V, I
D
= 6.5 A
0.38
0.50
Parameter
Test Conditions
V
DS
= 15 V
,
I
D
= 6.5 A
V
DS
= 25 V, f = 1 MHz, V
GS
= 0
Min.
Typ.
12
Max.
Unit
S
Forward Transconductance
Input Capacitance
Output Capacitance
Reverse Transfer
Capacitance
Equivalent Output
Capacitance
Turn-on Delay Time
Rise Time
Turn-off Delay Time
Fall Time
2750
275
60
pF
pF
pF
C
oss eq.
(*)
V
GS
= 0V, V
DS
= 6.5 V to 520 V
188
pF
t
d(on)
t
r
t
d(off)
t
f
Q
g
Q
gs
Q
gd
V
DD
= 325 V, I
D
= 6.5 A
R
G
= 4.7
V
GS
= 10 V
(see Figure 17)
25
25
68
17
ns
ns
ns
ns
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 520 V, I
D
= 13 A,
V
GS
= 10 V
(see Figure 20)
89
18
45
nC
nC
nC
Parameter
Test Conditions
Min.
Typ.
Max.
13
52
Unit
A
A
Source-drain Current
I
SD
= 13 A, V
GS
= 0
I
SD
= 13 A, di/dt = 100 A/μs,
V
DD
= 100 V, T
j
= 25
°
C
(see Figure 18)
1.6
V
Reverse Recovery Time
Reverse Recovery Charge
500
5.2
21
ns
μC
A
Reverse Recovery Time
Reverse Recovery Charge
I
SD
= 13 A, di/dt = 100 A/μs,
V
DD
= 100 V, T
j
= 150
°
C
(see Figure 18)
615
7
22.5
ns
μC
A
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