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參數(shù)資料
| 型號(hào)： | STB16NK65Z-S |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | N-CHANNEL 650V-0.38OHM-13A TO-220 I2SPAK Zener - Protected SuperMESH MOSFET |
| 中文描述： | N溝道?650V - 0.38OHM - 13A條至220 I2SPAK齊納- MOSFET的保護(hù)SuperMESH |
| 文件頁(yè)數(shù)： | 2/12頁(yè) |
| 文件大?。?/td> | 286K |
| 代理商： | STB16NK65Z-S |
STP16NK65Z - STB16NK65Z-S
2/12
Table 3: Absolute Maximum ratings
Symbol
V
DS
Drain-source Voltage (V
GS
= 0)
V
DGR
Drain-gate Voltage (R
GS
= 20 k
)
V
GS
Gate- source Voltage
I
D
Drain Current (continuous) at T
C
= 25
°
C
I
D
Drain Current (continuous) at T
C
= 100
°
C
I
DM
(*)
Drain Current (pulsed)
P
TOT
Total Dissipation at T
C
= 25
°
C
Derating Factor
V
ESD(G-S)
Gate source EDS (HBM-C=100pF, R=1.5k
)
dv/dt (1)
Peak Diode Recovery voltage slope
T
j
T
stg
Storage Temperature
(*) Pulse width limited by safe operating area
(1) I
SD
≤
13 A, di/dt
≤
200 A
/
μs, V
DD
≤
V
(BR)DSS
,T
j
≤
T
JMAX
Table 4: Thermal Data
Rthj-case
Rthj-amb
T
l
Table 5: Avalanche Characteristics
Symbol
I
AR
Avalanche Current, Repetitive or Not-Repetitive
(pulse width limited by T
j
max)
E
AS
Single Pulse Avalanche Energy
(starting T
j
= 25
°
C, I
D
= I
AR
, V
DD
= 50 V)
Table 6: Gate-Source Zener Diode
Symbol
BV
GSO
Gate-Source Breakdown
Voltage
PROTECTION FEATURES OF GATE-TO-SOURCE ZENER DIODES
The built-in back-to-back Zener diodes have specifically been designed to enhance not only the device
’
s
ESD capability, but also to make them safely absorb possible voltage transients that may occasionally be
applied fromgate to source. In this respect the Zener voltage ia appropriate to achieve an efficient and
cost-effective intervention to protect the device
’
s integrity. These integrated Zener diodes thus avoid the
usage of external components.
Parameter
Value
Unit
650
V
650
V
± 30
V
13
A
8.19
A
52
A
190
W
1.51
W/
°
C
6000
V
4.5
V/ns
Operating Junction Temperature
-55 to 150
°
C
Thermal Resistance Junction-case Max
Thermal Resistance Junction-ambient Max
0.66
62.5
°
C/W
°
C/W
Maximum Lead Temperature For Soldering Purpose
300
°
C
Parameter
Max. Value
13
Unit
A
350
mJ
Parameter
Test Condition
Igs=± 1mA (Open Drain)
Min.
30
Typ.
Max.
Unit
V
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