參數(shù)資料
型號(hào): STB10NC50-1
廠(chǎng)商: 意法半導(dǎo)體
英文描述: CAP OXI NIOB 47UF 10V 20% SMD
中文描述: ? -頻道500V - 0.48ohm - 10A條- I2PAK/D2PAK PowerMESH] MOSFET的
文件頁(yè)數(shù): 3/7頁(yè)
文件大?。?/td> 55K
代理商: STB10NC50-1
ELECTRICAL CHARACTERISTICS
(continued)
SWITCHING ON
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
d(on)
t
r
Turn-on Time
Rise Time
V
DD
= 250 V
R
G
= 4.7
I
D
= 5 A
V
GS
= 10 V
29
16
ns
ns
Q
g
Q
gs
Q
gd
Total Gate Charge
Gate-Source Charge
Gate-Drain Charge
V
DD
= 160 V
I
D
= 10 A V
GS
= 10 V
41
12
19
49
nC
nC
nC
SWITCHING OFF
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
t
r(Voff)
t
f
t
c
Off-voltage Rise Time
Fall Time
Cross-over Time
V
DD
= 160 V
R
G
= 4.7
I
D
= 10 A
V
GS
= 10 V
16
18
29
ns
ns
ns
SOURCE DRAINDIODE
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Unit
I
SD
I
SDM
(
)
Source-drain Current
Source-drain Current
(pulsed)
Forward On Voltage
10.6
42.4
A
A
V
SD
(
)
t
rr
I
SD
=10 A
V
GS
= 0
1.6
V
Q
rr
I
RRM
Reverse Recovery
Time
Reverse Recovery
Charge
Reverse Recovery
Current
I
SD
=10 A
V
DD
= 50 V
di/dt = 100 A/
μ
s
T
j
= 150
o
C
560
4.9
17.5
ns
nC
A
(
) Pulsed: Pulse duration = 300
μ
s, duty cycle 1.5 %
(
) Pulse width limited by safe operating area
STB10NC50 -1
3/7
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