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參數(shù)資料
| 型號(hào)： | ST93CS57M1013TR |
| 廠商： | 意法半導(dǎo)體 |
| 英文描述： | 2K 128 x 16 SERIAL MICROWIRE EEPROM |
| 中文描述： | 2K 128 × 16系列MICROWIRE的EEPROM的 |
| 文件頁(yè)數(shù)： | 2/16頁(yè) |
| 文件大?。?/td> | 124K |
| 代理商： | ST93CS57M1013TR |
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The data is then clocked out serially. The address
pointer is automaticallyincremented after the data
is output and, if the Chip Select input (S) is held
High, the ST93CS56/57 can output a sequential
streamof data words. In this way, the memory can
be read as a data stream of 16 to 2048 bits, or
continuouslyas the addresscounterautomatically
rolls over to 00 when the highest address is
reached. Within the time required by a program-
mingcycle (t
W
), up to 4 words may be written with
the help of the Page Write instruction; the whole
memory may also be erased,or set to a predeter-
mined pattern, by using the Write All instruction.
Within the memory, an user defined area may be
protected against further Write instructions. The
size of this area is defined by the content of a
Protect Register, located outside of the memory
array. As a final protection step, data may be per-
manently protected by programming a One Time
Programing bit (OTP bit) which locks the Protect
Register content.
Programming is internally self-timed (the external
clocksignal on Cinput may be disconnectedor left
running after the start of a Write cycle) and does
notrequirean erasecycle priorto the Writeinstruc-
tion.The Writeinstructionwrites 16bitsat onetime
into one of the 128 words,the PageWrite instruc-
tion writes up to 4 words of 16 bits to sequential
locations, assuming in both cases that all ad-
dressesare outsidethe Write Protectedarea.
After the start of the programming cycle, a
Ready/Busysignal is available on the Data output
(Q) when the Chip Select (S) input pin is driven
High.
VSS
Q
W
PRE
C
D
S
VCC
AI00897B
ST93CS56
ST93CS57
1
2
3
4
8
7
6
5
Figure2A. DIPPin Connections
1
2
3
4
VSS
Q
W
PRE
C
D
S
VCC
AI00898C
ST93CS56
ST93CS57
8
7
6
5
Figure 2B. SOPin Connections
DESCRIPTION
(cont’d)
Symbol
Parameter
Value
Unit
T
A
Ambient Operating Temperature
–40 to85
°
C
T
STG
Storage Temperature
–65 to150
°
C
T
LEAD
Lead Temperature,Soldering
(SO8 package)
(PSDIP8 package)
40 sec
10 sec
215
260
°
C
V
IO
Input or Output Voltages(Q = V
OH
or Hi-Z)
–0.3 to V
CC
+0.5
V
V
CC
Supply Voltage
–0.3 to 6.5
V
V
ESD
Electrostatic Discharge Voltage (Human Body model)
(2)
3000
V
Electrostatic Discharge Voltage (Machine model)
(3)
500
V
Notes:
1. Except for the rating ”O(jiān)perating Temperature Range”, stresses above those listed in the Table ”Absolute MaximumRatings”
may cause permanent damage to the device. These are stress ratings only and operation of the device at these or any other
conditions abovethose indicated in the Operating sectionsof this specification is not implied. Exposure to Absolute Maximum
Rating conditions for extended periods may affect device reliability.Refer also to the SGS-THOMSON SURE Program and other
relevant quality documents.
2. MIL-STD-883C, 3015.7 (100pF, 1500
).
3. EIAJ IC-121 (Condition C) (200pF, 0
).
Table 2. Absolute Maximum Ratings
(1)
2/16
ST93CS56, ST93CS57
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