參數(shù)資料
型號(hào): ST72F611F1
英文描述: 64Mb EDO/FPM - OBSOLETE
中文描述: ST7的-低速USB 8 - 3端點(diǎn)位MCU。閃存。內(nèi)徑。水分散粒劑。定時(shí)器
文件頁數(shù): 41/161頁
文件大?。?/td> 2070K
代理商: ST72F611F1
ST72324
135/161
12.8 I/O PORT PIN CHARACTERISTICS
12.8.1 General Characteristics
Subject to general operating conditions for VDD, fOSC, and TA unless otherwise specified.
Figure 77. Connecting Unused I/O Pins
Figure 78. Typical IPU vs. VDD with VIN=VSS
Notes:
1. Data based on characterization results, not tested in production.
2. Hysteresis voltage between Schmitt trigger switching levels. Based on characterization results, not tested.
3. When the current limitation is not possible, the VIN maximum must be respected, otherwise refer to IINJ(PIN) specifica-
tion. A positive injection is induced by VIN>VDD while a negative injection is induced by VIN<VSS. Refer to Section 12.2.2
on page 114 for more details.
4. Configuration not recommended, all unused pins must be kept at a fixed voltage: using the output mode of the I/O for
example or an external pull-up or pull-down resistor (see Figure 77). Data based on design simulation and/or technology
characteristics, not tested in production.
5. The RPU pull-up equivalent resistor is based on a resistive transistor (corresponding IPU current characteristics de-
scribed in Figure 78).
6. To generate an external interrupt, a minimum pulse width has to be applied on an I/O port pin configured as an external
interrupt source.
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VIL
Input low level voltage 1)
CMOS ports
0.3xVDD
V
VIH
Input high level voltage 1)
0.7xVDD
Vhys
Schmitt trigger voltage hysteresis 2)
0.7
IINJ(PIN)
3)
Injected Current on an I/O pin
VDD=5V
± 4
mA
ΣI
INJ(PIN)
3) Total injected current (sum of all I/O
and control pins)
± 25
IL
Input leakage current
VSSVINVDD
±1
A
IS
Static current consumption
Floating input mode4)
200
RPU
Weak pull-up equivalent resistor 5)
VIN=VSS
VDD=5V
50
120
250
k
CIO
I/O pin capacitance
5
pF
tf(IO)out
Output high to low level fall time 1)
CL=50pF
Between 10% and 90%
25
ns
tr(IO)out
Output low to high level rise time 1)
25
tw(IT)in
External interrupt pulse time 6)
1tCPU
10k
UNUSED I/O PORT
ST72XXX
10k
UNUSED I/O PORT
ST72XXX
VDD
0
10
20
30
40
50
60
70
80
90
22 .5
33 .5
4
4.5
5
5 .5
6
Vdd(V)
Ip
u(
uA
)
Ta=1 40°C
Ta=9 5°C
Ta=2 5°C
Ta=-45 °C
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