參數資料
型號： ST6G3238ETBR
廠商： 意法半導體
英文描述： Dual Supply Level Translator for SD/ MINISD/ T-FLASH With 【8KV Contact Discharge ESD Protection
中文描述： 雙電源電平轉換為SD / MiniSD卡/噸，閃光8kV接觸放電ESD保護與【
文件頁數： 9/17頁
文件大?。?/td> 199K
代理商： ST6G3238ETBR
ST6G3238E
DC and AC Parameters
9/17
Symbol
Parameter
Test Conditions
Value
Unit
V
CCA
(V)
V
CCB
(V)
T
A
= 25°C
-40 to 85°C
Min.
Max.
Min.
Max.
V
OL
(B port)
Low Level
Output Voltage
1.4-3.6
1.4-3.6
I
OL
= 100μA
0.20
V
1.4
1.4
I
OL
= 1 mA
0.35
1.65
1.65
I
OL
= 4 mA
0.45
2.3
2.3
I
OL
= 6 mA
0.55
3
3
I
OL
= 8 mA
0.70
I
IA
Input Leakage
Current for A-
side
1.8
2.9
V
IA
=V
CC
or
GND
DIR=HIGH
V
CD
=V
WP
=V
CCA
±0.5
±5
μA
I
IB
Input Leakage
Current for B-
side
1.8
2.9
V
CLK.h
=V
CCA
V
CMD
= V
CCB
V
DAT0,DAT1,D
AT2
=V
CCB
V
DAT3
=GND
DIR=LOW
V
CD
=V
WP
=V
CCA
±0.5
±5
μA
I
CCA
Quiescent
Supply Current
for A-side
1.65
3.6
V
IA
=V
CCA
or
GND
V
CD
=V
WP
=V
CCA
DIR=HIGH
0.5
5
μA
1.8
2.5
1.8
2.6
3.6
3.6
I
CCB
Quiescent
Supply Current
for B-side
1.65
3.6
V
CLK.h
=V
CCA
or GND
V
IB
=OPEN
DIR=LOW
V
CD
=V
WP
=V
CCA
0.5
5
μA
1.8
2.5
1.8
3.6
3.6
3.6
I
WP
WP pin input
Leakage Current
1.8
3.0
V
IA
=V
CCA
or
GND
DIR=HIGH
V
WP
=GND
36
μA
I
CD
CD pin input
Leakage Current
1.8
3.0
V
IA
=V
CCA
or
GND
DIR=HIGH
V
CD
=GND
36
μA
Table 7.
DC Specification
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