參數(shù)資料
型號(hào): ST183C08CFN0P
廠商: VISHAY INTERTECHNOLOGY INC
元件分類(lèi): 晶閘管
英文描述: 690 A, 800 V, SCR, TO-200AB
封裝: ROHS COMPLIANT, METAL, APUK-2
文件頁(yè)數(shù): 3/9頁(yè)
文件大?。?/td> 129K
代理商: ST183C08CFN0P
Document Number: 94368
For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 30-Apr-08
3
ST183CPbF Series
Inverter Grade Thyristors
(Hockey PUK Version), 370 A
Vishay High Power Products
SWITCHING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum non-repetitive rate of rise
of turned on current
dI/dt
TJ = TJ maximum, VDRM = Rated VDRM
ITM = 2 x dI/dt
1000
A/s
Typical delay time
td
TJ = 25 °C, VDM = Rated VDRM, ITM = 50 A DC, tp = 1 s
Resistive load, gate pulse: 10 V, 5
Ω source
1.1
s
Maximum turn-off time
minimum
tq
TJ = TJ maximum,
ITM = 300 A, commutating dI/dt = 20 A/s
VR = 50 V, tp = 500 s, dV/dt: See table in device code
10
maximum
20
BLOCKING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum critical rate of rise of off-state voltage
dV/dt
TJ = TJ maximum, linear to 80 % VDRM,
higher value available on request
500
V/s
Maximum peak reverse and off-state leakage current
IRRM,
IDRM
TJ = TJ maximum, rated VDRM/VRRM applied
40
mA
TRIGGERING
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum peak gate power
PGM
TJ = TJ maximum, f = 50 Hz, d% = 50
60
W
Maximum average gate power
PG(AV)
10
Maximum peak positive gate current
IGM
TJ = TJ maximum, tp ≤ 5 ms
10
A
Maximum peak positive gate voltage
+ VGM
20
V
Maximum peak negative gate voltage
- VGM
5
Maximum DC gate currrent required to trigger
IGT
TJ = 25 °C, VA = 12 V, Ra = 6 Ω
200
mA
Maximum DC gate voltage required to trigger
VGT
3V
Maximum DC gate current not to trigger
IGD
TJ = TJ maximum, rated VDRM applied
20
mA
Maximum DC gate voltage not to trigger
VGD
0.25
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER
SYMBOL
TEST CONDITIONS
VALUES
UNITS
Maximum operating junction temperature range
TJ
- 40 to 125
°C
Maximum storage temperature range
TStg
- 40 to 150
Maximum thermal resistance, junction to heatsink
RthJ-hs
DC operation single side cooled
0.17
K/W
DC operation double side cooled
0.08
Maximum thermal resistance, case to heatsink
RthC-hs
DC operation single side cooled
0.033
DC operation double side cooled
0.017
Mounting force, ± 10 %
4900
(500)
N
(kg)
Approximate weight
50
g
Case style
See dimensions - link at the end of datasheet
TO-200AB (A-PUK)
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
ST183C08CFNO 制造商:n/a 功能描述:Power Semiconductor
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ST183S04PFL1 功能描述:SCR 195 Amp 400 Volt 306 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
ST183S08PFL0 功能描述:SCR 800 Volt 195 Amp RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube
ST183S08PFL1 功能描述:SCR 195 Amp 800 Volt 306 Amp IT(RMS) RoHS:否 制造商:STMicroelectronics 最大轉(zhuǎn)折電流 IBO:480 A 額定重復(fù)關(guān)閉狀態(tài)電壓 VDRM:600 V 關(guān)閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開(kāi)啟狀態(tài) RMS 電流 (It RMS): 正向電壓下降:1.6 V 柵觸發(fā)電壓 (Vgt):1.3 V 最大柵極峰值反向電壓:5 V 柵觸發(fā)電流 (Igt):35 mA 保持電流(Ih 最大值):75 mA 安裝風(fēng)格:Through Hole 封裝 / 箱體:TO-220 封裝:Tube