參數(shù)資料
型號(hào)： SST85LD1001T-60-RI-LBTE
元件分類： 存儲(chǔ)控制器/管理單元
英文描述： IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
封裝： 12 X 24 MM, ROHS COMPLIANT, MO-210, LBGA-91
文件頁(yè)數(shù)： 3/36頁(yè)
文件大?。?/td> 913K
代理商： SST85LD1001T-60-RI-LBTE
2009 Silicon Storage Technology, Inc.
S71382-04-000
10/09
11
512 MByte / 1 GByte / 2 GByte NANDrive
SST85LD0512 / SST85LD1001T / SST85LD1002U
Data Sheet
Serial Communication Interface (SCI)
For additional manufacturing flexibility, the SCI bus can be used for manufacturing error reporting. The
SCI consists of 3 active signals: SCIDOUT, SCIDIN, and SCICLK. Always provide SCI interface access
to PCB design to aid in design validation.
Lifetime Expectancy
NANDrive is available with two endurance options—standard NANDrive and NANDrive with advanced
NAND management technology.
NANDrive with Advanced NAND Management Technology
NANDrive with advanced NAND management technology significantly extends the life of a product
with its extensive ECC, advanced wear-leveling, and data scan and Refresh (DSR) algorithms. Each
NANDrive device is partitioned into four wear-leveling groups. See Table 5 for the group size of each
product.
Each NANDrive wear-leveling group can receive at least 100 million write cycles from the host. With
four wear-leveling groups in each product, 400 million write cycles per product is possible when host
writes are evenly distributed across groups.
For applications where data security is essential, NANDrive with advanced NAND management tech-
nology offers two additional protection features—protection zones and password protections.
Protection zones - Up to four independent protection zones can be enabled as either Read-only or Hid-
den (Read/Write protected). If the zones are not enabled, the data is unprotected (default configura-
tion).
Password Protection - Requires a customer-unique password to access information within the pro-
tected zones.
相關(guān)PDF資料
PDF描述
SST85LD1004T-60-RI-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
SST85LD1008M-60-PC-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
SST85LD1008M-60-PC-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
SST85LP1004A-M-C-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
SST85LP1004A-M-C-LBTE IDE COMPATIBLE, FLASH MEMORY DRIVE CONTROLLER, PBGA91
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SST85LD1002L-60-4C-LBTE 功能描述:閃存 2G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1002L-60-PC-LBTE 功能描述:閃存 2GB NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1002U-60-5I-LBTE 功能描述:閃存 2G NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1002U-60-RI-LBTE 功能描述:閃存 2GB NAND 60ns 3.3V Industrial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
SST85LD1004M-60-4C-LBTE 功能描述:閃存 4G NAND 60ns 3.3V Commercial RoHS:否 制造商:ON Semiconductor 數(shù)據(jù)總線寬度:1 bit 存儲(chǔ)類型:Flash 存儲(chǔ)容量:2 MB 結(jié)構(gòu):256 K x 8 定時(shí)類型: 接口類型:SPI 訪問時(shí)間: 電源電壓-最大:3.6 V 電源電壓-最小:2.3 V 最大工作電流:15 mA 工作溫度:- 40 C to + 85 C 安裝風(fēng)格:SMD/SMT 封裝 / 箱體: 封裝:Reel
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