參數(shù)資料
型號： SSM6N15FU
廠商： Toshiba Corporation
英文描述： TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
中文描述： 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型
文件頁數(shù)： 1/5頁
文件大?。?/td> 154K
代理商： SSM6N15FU
SSM6N15FU
2001-12-05
1
TOSHIBA Field Effect Transistor Silicon N Channel MOS Type
SSM6N15FU
High Speed Switching Applications
Analog Switching Applications
Small package
Low ON resistance : R
on
= 4.0
(max) (@V
GS
= 4 V)
: R
on
= 7.0
(max) (@V
GS
= 2.5 V)
Maximum Ratings
(Ta 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
20
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta 25°C)
P
D
(Note)
200
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Total rating
Marking
Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment
is protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other
objects that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2J1C
Weight: 6.8 mg (typ.)
D P
6
5
4
1
2
3
Q1
Q2
6
5
4
1
2
3
相關(guān)PDF資料
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參數(shù)描述
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