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參數(shù)資料
| 型號： | SSM6N15FU |
| 廠商： | Toshiba Corporation |
| 英文描述： | TOSHIBA Field Effect Transistor Silicon N Channel MOS Type |
| 中文描述： | 東芝場效應(yīng)晶體管硅?頻道馬鞍山類型 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 154K |
| 代理商： | SSM6N15FU |
SSM6N15FU
2001-12-05
2
Electrical Characteristics
(Ta 25°C) (Q1, Q2 Common)
Characteristics
Symbol
Test Condition
Min
Typ.
Max
Unit
Gate leakage current
I
GSS
V
GS
16 V, V
DS
0
1
A
Drain-Source breakdown voltage
V
(BR) DSS
I
D
0.1 mA, V
GS
0
30
V
Drain cut-off current
I
DSS
V
DS
30 V, V
GS
0
1
A
Gate threshold voltage
V
th
V
DS
3 V, I
D
0.1 mA
0.8
1.5
V
Forward transfer admittance
Y
fs
V
DS
3 V, I
D
10 mA
25
mS
I
D
10 mA, V
GS
4 V
2.2
4.0
Drain-Source ON resistance
R
DS (ON)
I
D
10 mA, V
GS
2.5 V
4.0
7.0
Input capacitance
C
iss
7.8
pF
Reverse transfer capacitance
C
rss
3.6
pF
Output capacitance
C
oss
V
DS
3 V, V
GS
0, f 1 MHz
8.8
pF
Turn-on time
t
on
50
Switching time
Turn-off time
t
off
V
DD
5 V, I
D
10 mA,
V
GS
0~5 V
180
ns
Switching Time Test Circuit
Precaution
V
th
can be expressed as voltage between gate and source when low operating current value is I
D
1
00 A for this
product. For normal switching operation, V
GS
(on)
requires higher voltage than V
th
and V
GS (off)
requires lower
voltage than V
th
. (Relationship can be established as follows: V
GS (off)
V
th
V
GS (on)
)
Please take this into consideration for using the device. V
GS
recommended voltage of 2.5 V or higher to turn on
this product.
(c) V
OUT
(b) V
IN
t
on
90%
10%
0 V
5 V
10%
90%
t
off
t
r
t
f
V
DD
V
DS (ON)
V
DD
5 V
Duty
V
IN
: t
r
, t
f
5 ns
(Z
out
50 )
Common Source
Ta 25°C
1%
V
DD
OUT
IN
5 V
0
10 s
5
R
L
(a) Test circuit
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