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參數(shù)資料
| 型號： | SSM3J16FS |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
| 中文描述： | 場效應(yīng)晶體管硅P通道馬鞍山型高速開關(guān)應(yīng)用模擬開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大?。?/td> | 185K |
| 代理商： | SSM3J16FS |
SSM3J16FS
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J16FS
High Speed Switching Applications
Analog Switch Applications
Small package
Low on-resistance
: R
on
=
8
Ω
(max) (@V
GS
=
4 V)
: R
on
=
12
Ω
(max) (@V
GS
=
2.5 V)
: R
on
=
45
Ω
(max) (@V
GS
=
1.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
20
V
Gate-Source voltage
V
GSS
±
10
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
100
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note:
Using continuously under heavy loads (e.g. the application of
high temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual reliability data (i.e. reliability test report and
estimated failure rate, etc).
Marking
Equivalent Circuit
(top view)
3
Handling Precaution
When handling individual devices (which are not yet mounted on a circuit board), ensure that the environment is
protected against static electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
JEDEC
―
JEITA
―
TOSHIBA
2-2H1B
D T
1
2
3
1
2
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參數(shù)描述 |
|---|---|
| SSM3J16FS(TE85L,F) | 制造商:Toshiba America Electronic Components 功能描述:MOSFET, P CH, 0.1A, 20V, 2-2H1B 制造商:Toshiba America Electronic Components 功能描述:MOSFET, P CH, 0.1A, 20V, 2-2H1B; Transistor Polarity:P Channel; Continuous Drain Current Id:100mA; Drain Source Voltage Vds:-20V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-4V; Threshold Voltage Vgs Typ:1.1V; No. of Pins:3;RoHS Compliant: Yes 制造商:Toshiba America Electronic Components 功能描述:Transistor,FET,Pch,20V/100mA,SSM |
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| SSM3J16FU | 制造商:TOSHIBA 制造商全稱:Toshiba Semiconductor 功能描述:Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
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| SSM3J16FVTL3APZE | 制造商:Toshiba America Electronic Components 功能描述:TOSSSM3J16FVTL3APZE SMALL-SIGNAL MOSFET |
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