參數(shù)資料
型號(hào): SSM3J16FS
廠商: Toshiba Corporation
英文描述: Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications
中文描述: 場(chǎng)效應(yīng)晶體管硅P通道馬鞍山型高速開(kāi)關(guān)應(yīng)用模擬開(kāi)關(guān)應(yīng)用
文件頁(yè)數(shù): 3/5頁(yè)
文件大小: 185K
代理商: SSM3J16FS
SSM3J16FS
2007-11-01
3
I
D
– V
GS
Gate - Source voltage V
GS
(V)
D
D
-0.01
0
-1
-1000
-2
-4
-3
-1
-0.1
-10
-100
Ta
=
100°C
Common Source
VDS
=
-3 V
25°C
25°C
I
D
– V
DS
Drain - Source voltage V
DS
(V)
D
D
0
0
-100
-250
-1
-2
-1.5
-0.5
-50
-150
-200
VGS
=
-1.5 V
-2.3
-2.5
-2.7
Common Source
Ta
=
25°C
-3
-4
-10
-2.1
-1.9
-1.7
R
DS (ON)
– V
GS
Gate - Source voltage V
GS
(V)
D
R
D
Ω
)
-10
-8
-6
-4
-2
0
0
25
Common Source
ID
=
-1 mA
Ta=100
6
.4
20
1.2
1.6
10
8
1.4
1.8
2
-25
Drain current I
D
(mA)
D
R
D
Ω
)
0
-1
10
-1000
-10
5
15
20
-100
25
R
DS (ON)
– I
D
VGS
=
-1.5 V
-4 V
-2.5 V
0
25
10
40
50
150
125
0
5
25
30
75
20
-2.5 V, -10mA
VGS
=
1.5 V, ID=-1mA
Common Source
15
35
25
100
R
DS (ON)
– Ta
Ambient temperature Ta (°C)
D
R
D
Ω
)
-4V, -10mA
V
th
– Ta
Ambient temperature Ta (°C)
G
t
0
25
-0.4
-2
50
150
125
0
-0.2
-1.2
-1.6
75
-1
Common Source
ID
=
-0.1 mA
VDS
=
-3 V
-0.8
-1.8
25
100
-0.6
-1.4
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