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參數(shù)資料
| 型號： | SSM3J15TE |
| 廠商： | Toshiba Corporation |
| 英文描述： | Field Effect Transistor Silicon P Channel MOS Type High Speed Switching Applications Analog Switch Applications |
| 中文描述： | 場效應(yīng)晶體管硅P通道馬鞍山型高速開關(guān)應(yīng)用模擬開關(guān)應(yīng)用 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 190K |
| 代理商： | SSM3J15TE |
SSM3J15TE
2007-11-01
1
TOSHIBA Field Effect Transistor Silicon P Channel MOS Type
SSM3J15TE
High Speed Switching Applications
Analog Switch Applications
Small package
Low ON resistance
: R
on
=
12
Ω
(max) (@V
GS
=
4 V)
: R
on
=
32
Ω
(max) (@V
GS
=
2.5 V)
Absolute Maximum Ratings
(Ta = 25°C)
Characteristics
Symbol
Rating
Unit
Drain-Source voltage
V
DS
30
V
Gate-Source voltage
V
GSS
±
20
V
DC
I
D
100
Drain current
Pulse
I
DP
200
mA
Drain power dissipation (Ta
=
25°C)
P
D
100
mW
Channel temperature
T
ch
150
°C
Storage temperature range
T
stg
55~150
°C
Note: Using continuously under heavy loads (e.g. the application of high
temperature/current/voltage and the significant change in
temperature, etc.) may cause this product to decrease in the
reliability significantly even if the operating conditions (i.e.
operating temperature/current/voltage, etc.) are within the
absolute maximum ratings.
Please design the appropriate reliability upon reviewing the
Toshiba Semiconductor Reliability Handbook (“Handling
Precautions”/“Derating Concept and Methods”) and individual
reliability data (i.e. reliability test report and estimated failure rate, etc).
Marking Equivalent Circuit
(top view)
Handling Precaution
When handling individual devices (which are not yet mounting on a circuit board), be sure that the environment is
protected against electrostatic electricity. Operators should wear anti-static clothing, and containers and other objects
that come into direct contact with devices should be made of anti-static materials.
Unit: mm
1: Gate
2: Source
3: Drain
JEDEC
―
JEITA
―
TOSHIBA
2-1B1B
Weight: 0.0022 g(typ.)
D Q
1
2
3
1
2
3
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