參數(shù)資料
型號(hào)： SPN04N60C2
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁數(shù)： 3/10頁
文件大?。?/td> 97K
代理商： SPN04N60C2
2002-07-29
Page 3
SPN04N60C2
Final data
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Conditions
Values
typ.
Unit
min.
max.
Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=0.65A
-
1
-
S
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance,
1)
energy related
Effective output capacitance,
2)
time related
C
iss
C
oss
C
rss
C
o(er)
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
-
600
325
15
-
-
-
-
pF
V
GS
=0V,
V
DS
=0V to 480V
-
20
pF
C
o(tr)
-
35
-
Turn-on delay time
Rise time
Turn-off delay time
Fall time
t
d(on)
t
r
t
d(off)
t
f
V
DD
=380V,
V
GS
=0/13V,
I
D
=0.8A,
R
G
=18
,
T
j
=125°C
-
-
-
-
10
30
60
30
-
-
ns
-
-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
DD
=350V,
I
D
=0.8A
-
-
-
4.1
9.2
17
-
-
nC
V
DD
=350V,
I
D
=0.8A,
V
GS
=0 to 10V
-
Gate plateau voltage
V
(plateau)
V
DD
=350V,
I
D
=0.8A
-
7.5
-
V
1
C
o(er)
is a fixed capacitance that gives the same stored energy as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
2
C
o(tr)
is a fixed capacitance that gives the same charging time as
C
oss
while
V
DS
is rising from 0 to 80%
V
DSS
.
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參數(shù)描述
SPN04N60S5 功能描述:MOSFET COOL MOS N-CH 600V 0.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPN04N60S5_05 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Worldwide best RDS in SOT 223
SPN04N60S5NT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.8A 4-Pin(3+Tab) SOT-223 T/R
SPN04N60S5XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.8A 4-Pin(3+Tab) SOT-223
SPN05T10 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET
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