參數(shù)資料
型號(hào)： SPN04N60C2
廠商： INFINEON TECHNOLOGIES AG
英文描述： Cool MOS⑩ Power Transistor
中文描述： 酷馬鞍山⑩功率晶體管
文件頁數(shù)： 2/10頁
文件大?。?/td> 97K
代理商： SPN04N60C2
2002-07-29
Page 2
SPN04N60C2
Final data
Thermal Characteristics
Parameter
Symbol
Values
typ.
Unit
min.
max.
Characteristics
Thermal resistance, junction - soldering point
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJS
R
thJA
-
20
-
K/W
-
-
110
-
-
70
Linear derating factor
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
-
-
0.05
-
-
W/K
°C
T
sold
260
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=0.25mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=200μA
Zero gate voltage drain current
V
(BR)DSS
600
-
-
V
V
GS(th)
3.5
4.5
5.5
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 25 °C
V
DS
= 600 V,
V
GS
= 0 V,
T
j
= 150 °C
Gate-source leakage current
I
DSS
-
-
0.1
-
1
50
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
I
GSS
-
-
100
nA
V
GS
=10V,
I
D
=0.65A,
T
j
=25°C
Gate input resistance
f
= 1 MHz, open drain
R
DS(on)
-
0.8
0.95
R
G
-
0.95
-
1Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SPN04N60S5 功能描述:MOSFET COOL MOS N-CH 600V 0.8A RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPN04N60S5_05 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:New revolutionary high voltage technology Worldwide best RDS in SOT 223
SPN04N60S5NT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.8A 4-Pin(3+Tab) SOT-223 T/R
SPN04N60S5XT 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 600V 0.8A 4-Pin(3+Tab) SOT-223
SPN05T10 制造商:SYNC-POWER 制造商全稱:SYNC-POWER 功能描述:N-Channel Enhancement Mode MOSFET
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