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參數(shù)資料
| 型號： | SPM32-CA |
| 廠商： | Fairchild Semiconductor Corporation |
| 英文描述： | SPMTM (Smart Power Module) |
| 中文描述： | SPMTM（智能功率模塊） |
| 文件頁數(shù)： | 6/16頁 |
| 文件大?。?/td> | 428K |
| 代理商： | SPM32-CA |
2006 Fairchild Semiconductor Corporation
F
April 3, 2006
Absolute Maximum Ratings
Thermal Resistance
Note
2. For the measurement point of case temperature(T
), please refer to Fig. 2.
3. The thickness of thermal grease should not be more than 100um.
Package Marking and Ordering Information
Electrical Characteristics
Inverter Part
(T
J
= 25°C, Unless Otherwise Specified)
Note
4. t
and t
include the propagation delay time of the internal drive IC. t
C(ON)
and t
C(OFF)
are the switching time of IGBT itself under the given gate driving condition
internally. For the detailed information, please see Fig. 4.
Item
Symbol
R
th(j-c)Q
R
th(j-c)F
R
th(c-f)
Condition
Min. Typ.
-
-
-
Max.
1.0
1.5
0.06
Unit
°C/W
°C/W
°C/W
Junction to Case Thermal
Resistance
Inverter IGBT part (per 1/6 module)
Inverter FWDi part (per 1/6 module)
Ceramic Substrate (per 1 Module)
Thermal Grease Applied (Note 3)
-
-
-
Contact Thermal
Resistance
Device Marking
Device
Package
Real Size
Tape Width
Quantity
FSAM50SM60A
FSAM50SM60A
SPM32-CA
-
-
8
Item
Symbol
V
CE(SAT)
Condition
Min.
-
Typ.
-
Max.
2.4
Unit
V
Collector - emitter
Saturation Voltage
FWDi Forward Voltage
Switching Times
V
CC
= V
BS
= 15V
V
IN
= 0V
V
IN
= 5V
V
PN
= 300V, V
CC
= V
BS
= 15V
I
C
= 50A, T
J
= 25°C
V
IN
= 5V
0V, Inductive Load
(High-Low Side)
I
C
= 50A, T
J
= 25°C
V
FM
t
ON
t
C(ON)
t
OFF
t
C(OFF)
t
rr
I
CES
I
C
= 50A, T
J
= 25°C
-
-
-
-
-
-
-
-
2.1
-
-
-
-
-
250
V
μ
s
μ
s
μ
s
μ
s
μ
s
μ
A
(Note 4)
V
CE
= V
CES
, T
J
= 25°C
0.69
0.32
1.32
0.46
0.10
-
Collector - emitter
Leakage Current
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