參數(shù)資料
型號: SPI80N04S2-04
廠商: INFINEON TECHNOLOGIES AG
英文描述: OptiMOS Power-Transistor
中文描述: 的OptiMOS功率晶體管
文件頁數(shù): 5/8頁
文件大?。?/td> 269K
代理商: SPI80N04S2-04
2004-05-24
Page 5
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
5 Typ. output characteristic
I
D
=
f
(
V
DS
);
T
j
=25°C
parameter:
t
p
= 80 μs
0
0.5
1
1.5
2
2.5
3
3.5
4
V
V
DS
5
0
20
40
60
80
100
120
140
160
A
190
SPP80N04S2-04
P
tot
= 300W
I
D
V
GS [V]
a
a
4.5
b
b
5.0
c
c
5.3
d
d
5.5
e
e
5.7
f
f
6.0
g
g
10.0
6 Typ. drain-source on resistance
R
DS(on)
=
f
(
I
D
)
parameter:
V
GS
0
20
40
60
80
100
120
A
160
I
D
0
1
2
3
4
5
6
7
8
9
10
11
m
13
SPP80N04S2-04
R
D
V
GS
[V] =
b
5.0
b
c
c
5.3
d
d
5.5
e
e
5.7
f
f
6.0
g
g
10.0
7 Typ. transfer characteristics
I
D
=
f
(
V
GS
);
V
DS
2 x
I
D
x
R
DS(on)max
parameter:
t
p
= 80 μs
0
1
2
3
4
5
6
7
V
V
GS
9
0
40
80
120
160
200
240
A
320
I
D
8 Typ. forward transconductance
g
fs
= f(
I
D
);
T
j
=25°C
parameter:
g
fs
0
20
40
60
80
100 120 140 160
A
200
I
D
0
20
40
60
80
100
120
S
160
g
f
相關(guān)PDF資料
PDF描述
SPI80N04S2-H4 OptiMOS Power-Transistor
SPI80N08S2-07R OptiMOS Power-Transistor
SPI80N08S2-07 OptiMOS Power-Transistor
SPP80N08S2-07 OptiMOS Power-Transistor
SPB80N08S2-07 OptiMOS Power-Transistor
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SPI80N04S2-H4 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor
SPI80N06S-08 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPI80N06S08NK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262
SPI80N06S-08-TU 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SPI80N06S08XK 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262