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參數(shù)資料
| 型號： | SPI80N04S2-04 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數(shù)： | 2/8頁 |
| 文件大?。?/td> | 269K |
| 代理商： | SPI80N04S2-04 |
2004-05-24
Page 2
SPI80N04S2-04
SPP80N04S2-04,SPB80N04S2-04
Thermal Characteristics
Parameter
Symbol
Values
Unit
min.
typ.
max.
Characteristics
Thermal resistance, junction - case
R
thJC
R
thJA
R
thJA
-
0.3
0.5
K/W
Thermal resistance, junction - ambient, leaded
-
-
62
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
3)
-
-
-
-
62
40
Electrical Characteristics
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
Static Characteristics
Drain-source breakdown voltage
V
GS
=0V,
I
D
=1mA
Gate threshold voltage,
V
GS
=
V
DS
I
D
=250μA
Zero gate voltage drain current
V
(BR)DSS
40
-
-
V
V
GS(th)
2.1
3
4
V
DS
=40V,
V
GS
=0V,
T
j
=25°C
V
DS
=40V,
V
GS
=0V,
Tj
=125°C
2)
Gate-source leakage current
I
DSS
-
-
0.01
1
1
100
μA
V
GS
=20V,
V
DS
=0V
Drain-source on-state resistance
4)
I
GSS
-
1
100
nA
V
GS
=10V,
I
D
=80A
V
GS
=10V,
I
D
=80A,
SMD version
R
DS(on)
-
-
3
2.7
3.7
3.4
m
1Current limited by bondwire ; with an
R
thJC
= 0.5K/W the chip is able to carry
I
D
= 208A at 25°C, for detailed
information see app.-note ANPS071E available at
www.infineon.com/optimos
2Defined by design. Not subject to production test.
3Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 μm thick) copper area for drain
connection. PCB is vertical without blown air.
4Diagrams are related to straight lead versions
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SPI80N04S2-H4 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:OptiMOS Power-Transistor |
| SPI80N06S-08 | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPI80N06S08NK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262 |
| SPI80N06S-08-TU | 功能描述:MOSFET MOSFET RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SPI80N06S08XK | 制造商:Infineon Technologies AG 功能描述:Trans MOSFET N-CH 55V 80A 3-Pin(3+Tab) TO-262 |
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