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參數(shù)資料
| 型號： | SPI73N03S2L-08 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁數(shù)： | 3/8頁 |
| 文件大?。?/td> | 415K |
| 代理商： | SPI73N03S2L-08 |
2003-04-24
Page 3
SPI73N03S2L-08
SPP73N03S2L-08,SPB73N03S2L-08
Electrical Characteristics
Parameter
Symbol
Conditions
Values
Unit
min.
typ.
max.
Dynamic Characteristics
Transconductance
g
fs
V
DS
≥
2*
I
D
*
R
DS(on)max
,
I
D
=62A
32
63
-
S
Input capacitance
Output capacitance
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
V
GS
=0V,
V
DS
=25V,
f
=1MHz
-
-
1290
500
1710 pF
670
Reverse transfer capacitance
-
-
130
7.7
190
11.6
Turn-on delay time
Rise time
V
DD
=15V,
V
GS
=10V,
I
D
=18A,
R
G
=4.7
ns
-
20
30
Turn-off delay time
-
-
31.5
19
47.3
28.5
Fall time
Gate Charge Characteristics
Gate to source charge
Q
gs
Q
gd
Q
g
V
DD
=24V,
I
D
=36A
-
-
4
12
5
18
nC
Gate to drain charge
Gate charge total
V
DD
=24V,
I
D
=36A,
V
GS
=0 to 10V
-
34.7
46.2
Gate plateau voltage
V
(plateau)
V
DD
=24V,
I
D
=36A
-
3.6
-
V
Reverse Diode
Inverse diode continuous
forward current
I
S
T
C
=25°C
-
-
73
A
Inv. diode direct current, pulsed
Inverse diode forward voltage
I
SM
V
SD
t
rr
Q
rr
-
-
320
V
GS
=0V,
I
F
=73A
0.96
1.28
V
Reverse recovery time
V
R
=15V,
I
F=
l
S
,
d
i
F
/d
t
=100A/μs
-
-
27
21
40
31
ns
nC
Reverse recovery charge
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