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參數(shù)資料
| 型號(hào)： | SPI73N03S2L-08 |
| 廠(chǎng)商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | OptiMOS Power-Transistor |
| 中文描述： | 的OptiMOS功率晶體管 |
| 文件頁(yè)數(shù)： | 1/8頁(yè) |
| 文件大小： | 415K |
| 代理商： | SPI73N03S2L-08 |
2003-04-24
Page 1
SPI73N03S2L-08
SPP73N03S2L-08,SPB73N03S2L-08
Opti
MOS
Power-Transistor
Product Summary
V
DS
R
DS(on)
I
D
30
V
m
A
8.4
73
Feature
N-Channel
Enhancement mode
Logic Level
Excellent Gate Charge x
R
DS(on)
product (FOM)
Superior thermal resistance
175°C operating temperature
Avalanche rated
d
v
/d
t
rated
P- TO263 -3-2
P- TO262 -3-1
P- TO220 -3-1
Marking
2N03L08
2N03L08
2N03L08
Type
SPP73N03S2L-08
Package
P- TO220 -3-1
Ordering Code
Q67042-S4037
SPB73N03S2L-08
SPI73N03S2L-08
P- TO263 -3-2
P- TO262 -3-1
Q67042-S4036
Q67042-S4081
Maximum Ratings
, at
T
j
= 25 °C, unless otherwise specified
Parameter
Continuous drain current
1)
Symbol
I
D
Value
73
62
Unit
A
T
C
=25°C,
1)
Pulsed drain current
T
C
=25°C
Avalanche energy, single pulse
I
D puls
320
ID
=73A,
V
DD
=25V,
R
GS
=25
Repetitive avalanche energy, limited by
T
jmax
2)
Reverse diode d
v
/d
t
E
AS
170
mJ
E
AR
d
v
/d
t
10
IS
=73A,
V
DS
=24,
d
i
/d
t
=200A/μs,
T
jmax
=175°C
Gate source voltage
Power dissipation
6
kV/μs
V
GS
P
tot
±20
107
V
W
T
C
=25°C
Operating and storage temperature
T
j ,
T
stg
-55... +175
°C
IEC climatic category; DIN IEC 68-1
55/175/56
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