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參數(shù)資料
型號: SPC5517GAMMG66
廠商: Freescale Semiconductor
文件頁數(shù): 19/54頁
文件大小: 0K
描述: IC MCU 32B 1.5MB FLASH 208MAPBGA
標準包裝: 90
系列: MPC55xx Qorivva
核心處理器: e200z1
芯體尺寸: 32-位
速度: 66MHz
連通性: CAN,EBI/EMI,I²C,SCI,SPI
外圍設(shè)備: DMA,POR,PWM,WDT
輸入/輸出數(shù): 144
程序存儲器容量: 1.5MB(1.5M x 8)
程序存儲器類型: 閃存
RAM 容量: 80K x 8
電壓 - 電源 (Vcc/Vdd): 4.5 V ~ 5.25 V
數(shù)據(jù)轉(zhuǎn)換器: A/D 40x12b
振蕩器型: 內(nèi)部
工作溫度: -40°C ~ 125°C
封裝/外殼: 208-BGA
包裝: 托盤
MPC5510 Microcontroller Family Data Sheet, Rev. 3
Electrical Characteristics
Freescale Semiconductor
26
21
VRL to VSSA Differential Voltage
VRL – VSSA
– 100
100
mV
22
VSS to VSSA Differential Voltage
VSS – VSSA
– 100
100
mV
23
VSSSYN to VSS Differential Voltage
VSSSYN – VSS
–50
50
mV
24
VDDR to VDDA Differential Voltage
VDDR – VDDA
– 100
100
mV
25
Slew rate on VDDA, VDDR, and VDDE power supply pins9
Vramp
1
100
V/ms
26
Capactive Supply Load
VDD
VDD33
VDDSYN
Vload
800
200
nF
relation between ambient temperature TA and device junction temperature TJ.
2 M parts can’t go above 66 MHz.
3 V
PP can drop to 0 volts during read-only operations and before entry to Sleep mode, to reduce power consumption.
4 V
DDE1, VDDE2, and VDDE3 are separate power segments and may be powered independently with no differential voltage
constraints between the power segments.
5 If V
DDE1 is below VDDA than the analog input limits (spec #9 (Analog (AE/A) Input Voltage) in Table 6) will be based on the
VDDE1 voltage level.
6 Absolute value of current, measured at V
IL and VIH.
7 Weak pull up/down inactive. Measured at V
DDE = 5.25 V. Applies to pad types: SH and MH.
8 Maximum leakage occurs at maximum operating temperature. Leakage current decreases by approximately one-half for each
8 to 12 oC, in the ambient temperature range of 50 to 125 oC. Applies to pad types: A and AE.
9 This applies to the ramp up rate from 0.3 volts to 3.0 volts.
Table 6. DC Electrical Specifications (continued)
Num
Characteristic
Symbol
Min
Max
Unit
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