- 您現(xiàn)在的位置：買(mǎi)賣(mài)IC網(wǎng) > PDF目錄379394 > SML10S75XX (SEMELAB LTD) 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor PDF資料下載
參數(shù)資料
| 型號(hào)： | SML10S75XX |
| 廠商： | SEMELAB LTD |
| 元件分類(lèi)： | JFETs |
| 英文描述： | 16 Characters x 2 Lines, 5x7 Dot Matrix Character and Cursor |
| 中文描述： | 75 A, 100 V, 0.019 ohm, N-CHANNEL, Si, POWER, MOSFET |
| 封裝： | D3PAK-3 |
| 文件頁(yè)數(shù)： | 1/2頁(yè) |
| 文件大?。?/td> | 20K |
| 代理商： | SML10S75XX |
SML10S75XX
5/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
100
75
300
±20
±30
370
2.96
–55 to 150
300
75
30
1500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 0.53mH, R
G
= 25
W
, Peak I
L
= 75A
V
DSS
I
D(cont)
R
DS(on)
0.019
W
100V
75A
Faster Switching
Lower Leakage
100% Avalanche Tested
Surface Mount D
3
PAK Package
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
D
S
G
D
3
PAK Package Outline.
Dimensions in mm (inches)
15.95 (0.628)
16.05 (0.632)
1.04 (0.041)
1.15 (0.045)
4.98 (0.196)
1.47 (0.058)
1.57 (0.062)
5.45 (0.215) BSC
2 plcs.
2.67 (0.105)
1.27 (0.050)
1.40 (0.055)
13.41 (0.528)
13.51 (0.532)
13.79 (0.543)
13.99 (0.551)
1
3
2
0.46 (0.018)
0.56 (0.022)
3 plcs.
1.22 (0.048)
1.32 (0.052)
1.98 (0.078)
2.08 (0.082)
11.51 (0.453)
11.61 (0.457)
3.81 (0.150)
4.06 (0.160)
Pin 1 – Gate
Pin 2 – Drain
Heatsink is Drain.
Pin 3 – Source
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SML10T75XX | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML1201B8 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
| SML20B56 | HIGH POWER TERMINATION |
| SML20W65 | N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:200V,Id(cont):65A,Rds(on):0.026Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:200V,Id(cont):65A,Rds(on):0.026Ω)) |
| SML20L100 | N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SML10SIC03NC | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SiC SCHOTTKY DIODE |
| SML10SIC03NJC | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SiC SCHOTTKY DIODE |
| SML10SIC03YC | 制造商:SEME-LAB 制造商全稱(chēng):Seme LAB 功能描述:SiC SCHOTTKY DIODE |
| SML10SIC06SMD | 制造商:TT Electronics/ Semelab 功能描述:DIODE HIREL HITEM SIC REC TOSMD1 制造商:TT Electronics/ Semelab 功能描述:DIODE, HIREL, HITEM, SIC REC, TOSMD1 |
| SML10SIC06SMD5 | 制造商:TT Electronics/ Semelab 功能描述:DIODE HIREL HITE SIC REC TOSMD05 制造商:TT Electronics/ Semelab 功能描述:DIODE, HIREL, HITE, SIC REC, TOSMD05 |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。