參數(shù)資料
型號(hào)： SML10T75XX
廠商： SEMELAB LTD
元件分類： JFETs
英文描述： N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
中文描述： 100 A, 100 V, 0.011 ohm, N-CHANNEL, Si, POWER, MOSFET
封裝： T247CLIP, CLIP MOUNTED TO-247, 3 PIN
文件頁數(shù)： 1/2頁
文件大?。?/td> 19K
代理商： SML10T75XX
SML10T75XX
6/99
Semelab plc.
Telephone +44(0)1455 556565. Fax +44(0)1455 552612.
E-mail:
sales@semelab.co.uk
Website:
http://www.semelab.co.uk
V
DSS
I
D
I
DM
V
GS
V
GSM
P
D
T
J
, T
STG
T
L
I
AR
E
AR
E
AS
1
2
3
2
2
1
2
2
4.69 (0.185)
5.31 (0.209)
1.49 (0.059)
2.21 (0.087)
2.59 (0.102)
0.40 (0.016)
0.79 (0.031)
15.49 (0.610)
16.26 (0.640)
5.38 (0.212)
6.20 (0.244)
2.87 (0.113)
3.12 (0.123)
1.65 (0.065)
2.13 (0.084)
5.45 (0.215)
BSC
2plcs
Pin 3 – Source
1.01 (0.040)
1.40 (0.055)
4
M
T247clip Package Outline.
Dimensions in mm (inches)
Drain – Source Voltage
Continuous Drain Current
Pulsed Drain Current
1
Gate – Source Voltage
Gate – Source Voltage Transient
Total Power Dissipation @ T
case
= 25°C
Derate Linearly
Operating and Storage Junction Temperature Range
Lead Temperature : 0.063” from Case for 10 Sec.
Avalanche Current
1
(Repetitive and Non-Repetitive)
Repetitive Avalanche Energy
1
Single Pulse Avalanche Energy
2
N–CHANNEL
ENHANCEMENT MODE
HIGH VOLTAGE
POWER MOSFETS
100
100
400
±30
±40
520
4.16
–55 to 150
300
100
50
2500
V
A
A
V
W
W/°C
°C
A
mJ
ABSOLUTE MAXIMUM RATINGS
(T
case
= 25°C unless otherwise stated)
1) Repetitive Rating: Pulse Width limited by maximum junction temperature.
2) Starting T
J
= 25°C, L = 500μH, R
G
= 25
W
, Peak I
L
= 100A
V
DSS
I
D(cont)
R
DS(on)
0.011
W
100V
100A
Pin 1 – Gate
Pin 2 – Drain
D
S
G
Faster Switching
Lower Leakage
100% Avalanche Tested
New T247clip Package
(Clip–mounted TO–247 Package)
StarMOS is a new generation of high voltage
N–Channel enhancement mode power MOSFETs.
This new technology minimises the JFET effect,
increases packing density and reduces the
on-resistance. StarMOS also achieves faster
switching speeds through optimised gate layout.
相關(guān)PDF資料
PDF描述
SML1201B8 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML20B56 HIGH POWER TERMINATION
SML20W65 N-Channel Enhancement Mode High Voltage Power MOSFET(Vdss:200V,Id(cont):65A,Rds(on):0.026Ω)(N溝道增強(qiáng)型,高電壓功率MOS場(chǎng)效應(yīng)管(Vdss:200V,Id(cont):65A,Rds(on):0.026Ω))
SML20L100 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
SML20W65 N-CHANNEL ENHANCEMENT MODE HIGH VOLTAGE POWER MOSFETS
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