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參數(shù)資料
| 型號： | SMBTA42M |
| 廠商： | SIEMENS A G |
| 元件分類： | 小信號晶體管 |
| 英文描述： | NPN Silicon High-Voltage Transistor |
| 中文描述： | 500 mA, 300 V, NPN, Si, SMALL SIGNAL TRANSISTOR |
| 文件頁數(shù)： | 2/4頁 |
| 文件大小： | 42K |
| 代理商： | SMBTA42M |
SMBTA42M
Nov-30-2001
2
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified.
Parameter
Symbol
Values
typ.
Unit
min.
max.
DC characteristics
Collector-emitter breakdown voltage
I
C
= 100 μA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 μA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0
Collector cutoff current
V
CB
= 200 V,
I
E
= 0
Collector-base cutoff current
V
CB
= 200 V,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain 1)
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 30 mA,
V
CE
= 10 V
Collector-emitter saturation voltage1)
I
C
= 20 mA,
I
B
= 2 mA
Base-emitter saturation voltage 1)
I
C
= 20 mA,
I
B
= 2 mA
V
(BR)CEO
300
-
-
V
V
(BR)CBO
300
-
-
V
(BR)EBO
6
-
-
I
CBO
-
-
100
nA
I
CBO
-
-
20
μA
I
EBO
-
-
100
nA
h
FE
25
40
40
-
-
-
-
-
-
-
V
CEsat
-
-
0.5
V
V
BEsat
-
-
0.9
AC Characteristics
Transition frequency
I
C
= 10 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 20 V,
f
= 1 MHz
-
-
f
T
MHz
50
-
C
cb
3
pF
-
1) Pulse test: t < 300 s; D < 2%
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相關代理商/技術參數(shù) |
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|---|---|
| SMBTA43 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:NPN Silicon Transistors for High Voltages |
| SMBTA55 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors |
| SMBTA56 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistors |
| SMBTA56_07 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:PNP Silicon AF Transistor Low collector-emitter saturation voltage |
| SMBTA56E6327 | 制造商:Infineon Technologies AG 功能描述: 制造商:Rochester Electronics LLC 功能描述: |
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