參數(shù)資料
型號(hào): SMBTA56M
廠商: INFINEON TECHNOLOGIES AG
英文描述: PNP Silicon AF Transistor
中文描述: 自動(dòng)對(duì)焦進(jìn)步黨硅晶體管
文件頁(yè)數(shù): 1/4頁(yè)
文件大?。?/td> 45K
代理商: SMBTA56M
SMBTA56M
Nov-30-2001
1
PNP Silicon AF Transistor
High breakdown voltage
Low collector-emitter saturation voltage
Complementary type: SMBTA06M (NPN)
VPW05980
1
2
3
5
4
Type
SMBTA56M
Marking
s2G
Pin Configuration
2 = C
3 = E
Package
SCT595
1 = B
4 n.c. 5 = C
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current
Peak base current
Symbol
Unit
V
Value
80
80
4
500
1
100
200
1
150
-65 .. 150
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
P
tot
T
j
T
stg
mA
A
mA
W
°C
Total power dissipation
,
T
S
95 °C
Junction temperature
Storage temperature
Thermal Resistance
Junction - soldering point
1)
R
thJS
55
K/W
1For calculation of
R
thJA
please refer to Application Note Thermal Resistance
相關(guān)PDF資料
PDF描述
SMBTA56M PNP Silicon AF Transistor
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