參數(shù)資料
型號(hào): SMBT3904
廠商: INFINEON TECHNOLOGIES AG
英文描述: NPN Silicon Switching Transistor
中文描述: NPN硅開(kāi)關(guān)晶體管
文件頁(yè)數(shù): 2/7頁(yè)
文件大?。?/td> 217K
代理商: SMBT3904
SMBT3904UPN
Aug-21-2002
2
Electrical Characteristics
at
T
A
=25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics per Transistor
Collector-emitter breakdown voltage
I
C
= 1 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 μA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0
Collector cutoff current
V
CB
= 30 V,
I
E
= 0
DC current gain 1)
I
C
= 100 μA,
V
CE
= 1 V
I
C
= 1 mA,
V
CE
= 1 V
I
C
= 10 mA,
V
CE
= 1 V
I
C
= 50 mA,
V
CE
= 1 V
I
C
= 100 mA,
V
CE
= 1 V
V
(BR)CEO
40
-
-
V
V
(BR)CBO
40
-
-
V
(BR)EBO
5
-
-
I
CBO
-
-
50
nA
h
FE
40
70
100
60
30
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
Base-emitter saturation voltage 1)
I
C
= 10 mA,
I
B
= 1 mA
I
C
= 50 mA,
I
B
= 5 mA
V
CEsat
-
-
-
-
0.25
0.4
V
V
BEsat
0.65
-
-
-
0.85
0.95
1) Pulse test: t < 300 s; D < 2%
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