參數(shù)資料
型號： SMBT2222A
廠商： INFINEON TECHNOLOGIES AG
英文描述： NPN Silicon Switching Transistor
中文描述： NPN硅開關(guān)晶體管
文件頁數(shù)： 3/6頁
文件大?。?/td> 210K
代理商： SMBT2222A
SMBT2222A/ MMBT2222A
3
Feb-18-2002
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
AC Characteristics
Transition frequency
I
C
= 20 mA,
V
CE
= 20 V,
f
= 100 MHz
Collector-base capacitance
V
CB
= 10 V,
f
= 1 MHz
Emitter-base capacitance
V
EB
= 0.5 V,
f
= 1 MHz
Noise figure
I
C
= 100 μA,
V
CE
= 10 V,
R
S
= 1
k
,
f
= 1 kHz,
f
= 200
Hz
f
T
300
-
-
MHz
C
cb
-
-
8
pF
C
eb
-
-
25
F
-
-
4
dB
Short-circuit input impedance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit reverse voltage transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
Short-circuit forward current transf.ratio
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
Open-circuit output admittance
I
C
= 1 mA,
V
CE
= 10 V,
f
= 1 kHz
I
C
= 10 mA,
V
CE
= 10 V,
f
= 1 kHz
Delay time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA,
V
BE(off)
= 0.5 V
Rise time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
= 15 mA,
V
BE(off)
= 0.5 V
Storage time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
=
I
B2
= 15mA
Fall time
V
CC
= 30 V,
I
C
= 150 mA,
I
B1
=
I
B2 = 15mA
h
11e
2
0.25
-
-
8
1.25
k
h
12e
-
-
-
-
8
4
10
-4
h
21e
50
75
-
-
300
375
-
h
22e
5
25
-
-
35
200
S
t
d
-
-
10
ns
t
r
-
-
25
t
stg
-
-
225
ns
t
f
-
-
60
ns
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