參數(shù)資料
型號(hào)： SMBT2222A
廠商： INFINEON TECHNOLOGIES AG
英文描述： NPN Silicon Switching Transistor
中文描述： NPN硅開(kāi)關(guān)晶體管
文件頁(yè)數(shù)： 2/6頁(yè)
文件大?。?/td> 210K
代理商： SMBT2222A
SMBT2222A/ MMBT2222A
2
Feb-18-2002
Electrical Characteristics
at
T
A
= 25°C, unless otherwise specified
Parameter
Symbol
Values
Unit
min.
typ.
max.
DC Characteristics
Collector-emitter breakdown voltage
I
C
= 10 mA,
I
B
= 0
Collector-base breakdown voltage
I
C
= 10 μA,
I
E
= 0
Emitter-base breakdown voltage
I
E
= 10 μA,
I
C
= 0
Collector cutoff current
V
CB
= 60 V,
I
E
= 0
Collector cutoff current
V
CB
= 60 V,
I
E
= 0 ,
T
A
= 150 °C
Emitter cutoff current
V
EB
= 3 V,
I
C
= 0
DC current gain 1)
I
C
= 100 μA,
V
CE
= 10 V
I
C
= 1 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V
I
C
= 150 mA,
V
CE
= 1 V
I
C
= 150 mA,
V
CE
= 10 V
I
C
= 500 mA,
V
CE
= 10 V
I
C
= 10 mA,
V
CE
= 10 V,
T
A
= 55°C
V
(BR)CEO
40
-
-
V
V
(BR)CBO
75
-
-
V
(BR)EBO
6
-
-
I
CBO
-
-
10
nA
I
CBO
-
-
10
μA
I
EBO
-
-
10
nA
h
FE
35
50
75
50
100
40
35
-
-
-
-
-
-
-
-
-
-
-
300
-
-
-
Collector-emitter saturation voltage1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
Base-emitter saturation voltage 1)
I
C
= 150 mA,
I
B
= 15 mA
I
C
= 500 mA,
I
B
= 50 mA
V
CEsat
-
-
-
-
0.3
1
V
V
BEsat
0.6
-
-
-
1.2
2
1) Pulse test: t
≤
=
300
μ
s, D = 2%
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
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