參數(shù)資料
型號： SM2T6V8A
廠商： STMICROELECTRONICS
元件分類： TVS二極管 - 瞬態(tài)電壓抑制
英文描述： 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
封裝： STMITE PACKAGE-2
文件頁數(shù)： 1/6頁
文件大?。?/td> 51K
代理商： SM2T6V8A
1/6
SM2T
TRANSIL
REV. 3
K
A
STmite
(JEDEC DO-216AA)
January 2005
FEATURES
■ High Peak pulse power:
200 W (10/1000 s )
1000 W ( 8/20 s)
■ Stand-off voltage range 5 to 24V
■ Unidirectional types
■ Low clamping factor VCL/VBR
■ Fast response time
■ 1.0mm overall component height
DESCRIPTION
The SM2T series are Transil diodes designed spe-
cifically for portable equipment and miniaturized
electronics devices subject to ESD transient over-
voltages.
Fully compatible with pick and place equipment
and inspectable soldering joints.
Table 2: Absolute Ratings (Tamb = 25°C)
Table 3: Thermal Resistances
Symbol
Parameter
Value
Unit
PPP
Peak pulse power dissipation (see note 1)
Tj initial = Tamb
200
W
P
Power dissipation on infinite heatsink
Tamb = 100°C
2.5
W
IFSM
Non repetitive surge peak forward current
tp = 10 ms
Tj initial = Tamb
25
A
Tstg
Tj
Storage temperature range
Maximum junction temperature
-65 to 175
150
°C
TL
Maximum lead temperature for soldering during 10 s.
260
°C
Note 1: 10/1000s pulse waveform.
Symbol
Parameter
Value
Unit
Rth(j-t)
Junction to tab
20
°C/W
Rth(j-a) Junction to ambient on PCB with recommended pad layout
250
°C/W
Table 1: Order Codes
Part Number
Marking
SM2T6V8A
MUA
SM2T14A
MUE
SM2T18A
MUG
SM2T27A
MUJ
相關(guān)PDF資料
PDF描述
SM2T27A 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
SM2T14A 200 W, UNIDIRECTIONAL, SILICON, TVS DIODE, DO-216AA
SM30KPA100 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SM30KPA220A 30000 W, UNIDIRECTIONAL, SILICON, TVS DIODE
SM30KPA75CA 30000 W, BIDIRECTIONAL, SILICON, TVS DIODE
相關(guān)代理商/技術(shù)參數(shù)
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