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參數(shù)資料
| 型號： | SLX24C164P |
| 廠商： | SIEMENS AG |
| 英文描述： | 16 Kbit 2048 x 8 bit Serial CMOS EEPROMs, I2C Synchronous 2-Wire Bus, Page Protection Mode |
| 中文描述： | 16千位2048 × 8位串行CMOS EEPROM的，I2C同步2線巴士，頁面保護(hù)模式 |
| 文件頁數(shù)： | 11/27頁 |
| 文件大?。?/td> | 361K |
| 代理商： | SLX24C164P |
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SLx 24C164/P
Semiconductor Group
11
1998-07-27
5
Changing of the EEPROM data is initiated by the master with the command byte CSW.
Depending on the state of the Write Protection pin WP and of the Protection Bits (refer
to
chapter 7
Page Protection Mode
TM
) either one byte (Byte Write) or up to 16 byte
(Page Write) are modified in one programming procedure.
Write Operations
5.1
Byte Write
Figure 7
Byte Write Sequence
The erase/write cycle is finished latest after 8 ms. Acknowledge polling may be used for
speed enhancement in order to indicate the end of the erase/write cycle (refer to
chapter 5.3
Acknowledge Polling).
Address Setting
After a START condition the master transmits the Chip Select
Write byte CSW. The EEPROM acknowledges the CSW byte
during the ninth clock cycle. The following byte with the
EEPROM address (A0 to A7) is loaded into the address
counter of the EEPROM and acknowledged by the EEPROM.
Finally the master transmits the data byte which is also
acknowledged by the EEPROM into the internal buffer.
Then the master applies a STOP condition which starts the
internal programming procedure. The data bytes are written in
the memory location addressed in the EEA byte (A0 to A7)
and the CSW byte (A8 to A10). The programming procedure
consists of an internally timed erase/write cycle. In the first
step, the selected byte is erased to “1”. With the next internal
step, the addressed byte is written according to the contents
of the buffer.
Transmission of Data
Programming Cycle
Command Byte
CSW
S
P
C
K
A
C
K
A
S
T
A
R
T
T
O
P
S
EEPROM Address
EEA
Data Byte
Bus Activity
Master
SDA Line
Bus Activity
EEPROM
IED02129
C
K
A
0
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