參數(shù)資料
型號: SLE 5542 M3.2
廠商: Infineon Technologies
文件頁數(shù): 3/6頁
文件大?。?/td> 0K
描述: IC MEMORY
標(biāo)準(zhǔn)包裝: 1
系列: *
其它名稱: SLE 5542 M3.2DKR
SLE 5542
Short Product Information
3 / 6
2006-05-19
Intelligent 256-Byte EEPROM
with Write Protection Function
and Programmable Security Code (PSC)
Features
100% functional compatibility to SLE 4442
256 x 8 bit EEPROM organization of Data Memory
32 x 1 bit Protection Memory
– Byte-wise write protection of first 32 addresses (byte 0...31) of Data Memory
– Manufacturer Code for unique identification of application
Data Memory (addresses 0…255) alterable only after verification of 3-Byte
Programmable Security Code (PSC)
Two-wire link protocol
– Byte-wise addressing
– End of processing indicated at data output
Contact configuration and Answer-to-Reset (synchronous transmission) in accordance
to standard ISO/IEC 7816
Sophisticated electrical characteristics
– Ambient temperature –40 … +80°C for chip, –25 … +80°C for module
– Supply voltage 5 V
± 10 %
– Supply current < 3 mA (typical 600 A)
– EEPROM erase / write time 5 ms
– ESD protection typical 4,000 V
– EEPROM Endurance minimum 100,000 erase / write cycles1)
– Data retention for minimum of 10 years1)
Advanced 1.2 m CMOS-technology optimised for security layout
– EEPROM-cells protected by shield
– Shielding of deeper layers via metal
– Sensory and logical security functions
– No isolation on backside necessary
1) Values are temperature dependent.
M3
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