參數(shù)資料
型號: SKM200GB126D
廠商: SEMIKRON INTERNATIONAL
元件分類: 功率晶體管
英文描述: Trench IGBT Modules
中文描述: 260 A, 1200 V, N-CHANNEL IGBT
封裝: CASE D56, SEMITRANS-7
文件頁數(shù): 4/4頁
文件大?。?/td> 749K
代理商: SKM200GB126D
Fig. 13 Typ. CAL diode recovered charge
UL Recognized
File no. E 63 532
Dimensions in mm
M +#
M+#
5J
M+A
5'D
This is an electrostatic discharge sensitive device (ESDS), international standard IEC 60747-1, Chapter IX.
This technical information specifies semiconductor devices but promises no characteristics. No warranty or guarantee
expressed or implied is made regarding delivery, performance or suitability.
SKM 200GB126D ...
4
14-09-2005 RAA
by SEMIKRON
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKM200GB126D_06 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Trench IGBT Modules
SKM200GB128D 制造商:SEMIKRON 功能描述:POWER IGBT TRANSISTOR
SKM200GB128D 制造商:SEMIKRON 功能描述:IGBT MODULE HALF BRIDGE
SKM200GB128D_06 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:SPT IGBT Module
SKM200GB12E4 制造商:SEMIKRON 功能描述:IGBT HALFBRIDGE MOD 200A 1200V 制造商:SEMIKRON 功能描述:IGBT halfbridge module 314A 1200V