參數資料
型號: SKM200GB126D
廠商: SEMIKRON INTERNATIONAL
元件分類: 功率晶體管
英文描述: Trench IGBT Modules
中文描述: 260 A, 1200 V, N-CHANNEL IGBT
封裝: CASE D56, SEMITRANS-7
文件頁數: 3/4頁
文件大?。?/td> 749K
代理商: SKM200GB126D
Fig. 7 Typ. switching times vs. I
C
Fig. 8 Typ. switching times vs. gate resistor R
G
Fig. 9 Transient thermal impedance of IGBT
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 10 Transient thermal impedance of FWD
Z
thp(j-c)
= f (t
p
); D = t
p
/t
c
= t
p
*f
Fig. 11 CAL diode forward characteristic
Fig. 12 Typ. CAL diode peak reverse recovery current
SKM 200GB126D ...
3
14-09-2005 RAA
by SEMIKRON
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相關代理商/技術參數
參數描述
SKM200GB126D_06 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Trench IGBT Modules
SKM200GB128D 制造商:SEMIKRON 功能描述:POWER IGBT TRANSISTOR
SKM200GB128D 制造商:SEMIKRON 功能描述:IGBT MODULE HALF BRIDGE
SKM200GB128D_06 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:SPT IGBT Module
SKM200GB12E4 制造商:SEMIKRON 功能描述:IGBT HALFBRIDGE MOD 200A 1200V 制造商:SEMIKRON 功能描述:IGBT halfbridge module 314A 1200V