參數(shù)資料
型號: SKM-600GA124D
廠商: SEMIKRON
英文描述: Low Loss IGBT Module
中文描述: 低損耗IGBT模塊
文件頁數(shù): 5/6頁
文件大小: 382K
代理商: SKM-600GA124D
by SEMIKRON
010502
B 6 – 35
SKM 600 GA 124 D
M600GA124.XLS-24
0
20
40
60
80
100
120
μC
0
1000
2000
3000
4000
5000
6000
di
F
/dt
A/μs
Q
rr
I
F
=
400 A
300 A
200 A
100 A
5
4
10
R
G
=
800 A
M600GA124.XLS-23
0
100
I
RR
200
300
400
500
600
0
2000
4000
6000
8000
di
F
/dt
A/μs
A
5
4
10
R
G
M600GA124.XLS-22
0
100
200
300
400
500
0
200
400
600
800
1000
I
F
A
I
RR
A
5
4
10
R
G
M600GA124.XLS-20
0,0001
0,001
0,01
0,1
0,00001
0,0001
0,001
0,01
0,1
1
s
Z
thJC
K/W
D=0,5
0,2
0,1
0,05
0,02
0,01
single pulse
t
p
M600GA124.XLS-19
0,00001
0,0001
0,001
0,01
0,1
0,00001
0,0001
0,001
0,01
0,1
1
t
p
s
Z
thJC
K/W
D=0,50
0,20
0,10
0,05
0,02
0,01
single pulse
Fig. 19 Transient thermal impedance of IGBT
Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f
Fig. 20 Transient thermal impedance of
inverse CAL diodes Z
thJC
= f (t
p
); D = t
p
/ t
c
= t
p
· f
Fig. 22 Typ. CAL diode peak reverse recovery
current I
RR
= f (I
F
; R
G
)
Fig. 23 Typ. CAL diode peak reverse recovery
current I
RR
= f (di
F
/dt; R
G
)
Fig. 24 Typ. CAL diode recovered charge
Q
RR
= f (di
F
/dt; I
F
; R
G
+
+/
+9
+
+/
+9
>
+83
+
+/
+9
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