- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄382516 > SKM-600GA124D (SEMIKRON) Low Loss IGBT Module PDF資料下載
參數(shù)資料
| 型號： | SKM-600GA124D |
| 廠商： | SEMIKRON |
| 英文描述： | Low Loss IGBT Module |
| 中文描述： | 低損耗IGBT模塊 |
| 文件頁數(shù)： | 4/6頁 |
| 文件大?。?/td> | 382K |
| 代理商： | SKM-600GA124D |
8
M600GA124.XLS-15
10
100
1000
10000
0
200
400
600
800
1000
I
C
A
t
ns
t
doff
t
don
t
f
t
r
M600GA124.XLS-18
0
5
10
15
20
25
30
35
40
0
200
400
600
800
1000
I
F
A
E
offD
mJ
5
4
10
R
G
=
M600GA124.XLS-16
10
100
1000
10000
2
4
6
8
10
12
R
G
t
ns
t
doff
t
don
t
r
t
f
M600GA124.XLS-13
0
2
4
6
8
10
12
14
16
18
20
0
1000
2000
3000
4000
Q
Gate
nC
V
GE
V
600
800V
M600GA124.XLS-14
1
10
100
0
10
20
30
V
CE
V
C
nF
C
ies
C
oes
C
res
M600GA124.XLS-17
0
200
400
600
800
0
1
2
3
V
F
V
I
F
A
T
j
=125°C, typ.
T
j
=25°C, typ.
T
j
=125°C,
max.
T
j
=25°C, max.
Fig. 13 Typ. gate charge characteristic
Fig. 14 Typ. capacitances vs.V
CE
V
GE
= 0 V
f = 1 MHz
Fig. 15 Typ. switching times vs. I
C
Fig. 16 Typ. switching times vs. gate resistor R
G
Fig. 17 Typ. CAL diode forward characteristic
Fig. 18 Diode turn-off energy dissipation per pulse
T
j
= 125 °C
V
CE
= 600 V
V
GE
= ± 15 V
I
C
= 400 A
induct. load
I
Cpuls
= 400 A
T
j
= 125 °C
V
CE
= 600 V
V
GE
= ± 15 V
R
Gon
= 4
R
Goff
= 4
induct. load
V
CC
= 600 V
T
j
= 125 °C
V
GE
= ± 15 V
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SKM100GAR123D | IGBT Modules |
| SKM100GB123D | IGBT Modules |
| SKM100GB173D | IGBT Modules |
| SKM100GD063DL | Superfast NPT-IGBT Module |
| SKM111AR | Power MOSFET Modules |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKM600GA124D_06 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Trench IGBT Modules |
| SKM600GA125D | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Ultra Fast IGBT Modules |
| SKM600GA125D_09 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Ultra Fast IGBT Modules |
| SKM600GA125D_11 | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Ultra Fast IGBT Modules |
| SKM600GA126D | 制造商:SEMIKRON 制造商全稱:Semikron International 功能描述:Trench IGBT Modules |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。