參數(shù)資料
型號(hào)： SIP21102DR-30-E3
廠(chǎng)商： VISHAY SILICONIX
元件分類(lèi)： 固定正電壓?jiǎn)温份敵鯨DO穩(wěn)壓器
英文描述： 3 V FIXED POSITIVE LDO REGULATOR, 0.22 V DROPOUT, PDSO5
封裝： ROHS COMPLIANT, SC-70, 5 PIN
文件頁(yè)數(shù)： 4/10頁(yè)
文件大?。?/td> 141K
代理商： SIP21102DR-30-E3
Document Number: 73213
S09-1453-Rev. E, 03-Aug-09
www.vishay.com
3
Vishay Siliconix
SiP21102
Notes:
a. Room = 25 °C, Full = - 40 °C to 85 °C.
b. The algebraic convention whereby the most negative value is a minimum and the most positive a maximum.
c. Typical values are for DESIGN AID ONLY, not guaranteed nor subject to production testing. Typical values for dropout voltage at VOUT ≥ 2 V
are measured at VOUT = 3.3 V, while typical values for dropout voltage at VOUT < 2 V are measured at VOUT = 1.8 V.
d. Dropout voltage is defined as the input to output differential voltage at which the output voltage drops 2 % below the output voltage measured
with a 1 V differential, provided that VIN does not drop below 2.0 V.
e. Ground current is specified for normal operation as well as “drop-out” operation.
f. The device’s shutdown pin includes a typical 2 M
Ω internal pull-down resistor connected to ground.
g. VOUT(nom) is VOUT when measured with a 1 V differential to VIN.
SPECIFICATIONS
Parameter
Symbol
Test Conditions Unless Specified
TA = 25 °C, VIN = VOUT(nom) + 1 V, IOUT = 1 mA,
CIN = 1 F, COUT = 1.0 F, VSD = 1.5 V
Temp.a
Limits
- 40 °C to 85 °C
Unit
Min.b Typ.c Max.b
Ground Pin Currente, g
(VOUT(nom) ≤ 3 V)
IGND
IOUT = 0 mA
Room
100
150
A
Full
180
IOUT = 150 mA
Room
110
200
Full
230
Ground Pin Currente
(VOUT(nom) > 3 V)
IOUT = 0 mA
Room
110
170
Full
200
IOUT = 150 mA
Room
120
200
Full
230
Peak Output current
IO(peak)
VOUT ≥ 0.95 x VOUT(nom). tPW = 2 ms
Full
300
mA
Ripple Rejection
ΔV
OUT/ΔVIN
IOUT = 150 mA
f = 1 kHz
Room
60
dB
f = 10 kHz
Room
40
f = 100 kHz
Room
30
Dynamic Line Regulation
VO(line)
VIN : VOUT(nom) + 1 V to VOUT(nom) + 2 V
tr/tf = 2 s, IOUT = 150 mA
Room
20
mV
Dynamic Load Regulation
VO(load)
IOUT : 1 mA to 150 mA, tr/tf = 2 s
Room
20
Thermal Shutdown Junction
Temperature
TJ(S/D)
Room
150
°C
Thermal Hysteresis
THYST
Room
20
Reverse current
IR
VIN = - 6.0 V
Room
1
A
Short Circuit Current
ISC
VOUT = 0 V
Room
700
mA
Shutdown
Shutdown Supply Current
ICC(off)
VSD = 0 V
Room
0.1
1
A
SD Pin Input Voltage
VSD
High = regulator on (rising)
Full
1.5
VIN
V
Low = regulator off (falling)
Full
0.4
Auto Discharge Resistance
R_DIS
SiP21102 only
Room
100
Ω
SD Pin Input Currentf
IIN(SD)
VSD = 1.5 V, VIN = 6 V
Room
0.7
A
SD Hysteresis
VHYST(SD)
Full
150
mV
VOUT Turn-On Time
tON
VSD (See Figure 1), ILOAD = 100 nA
Room
50
S
ERROR Output
ERROR High Leakage
IOFF
ERROR
≤ V
IN. VOUT in regulation
Full
1
A
ERROR Low Voltage
VOL
ISINK = 0.5 mA
Full
0.4
V
ERROR Voltage Threshold
VERROR
VOUT below VOUT(nom)
g, V
IN ≥ 2 V
VOUT falling, IOUT = 1 mA, VOUT(nom) ≥ 2 V
Full
- 2
- 4
- 6
%
VOUT(nom)
g < 2 V, V
IN > 2 V
Full
- 4
ERROR Voltage Threshold
Hysteresis
VHYST(ERROR)
Room
1.5
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