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參數(shù)資料
| 型號： | SIGC81T60NC |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SIGC81T60NC |
SIGC81T60NC
Edited by INFINEON Technologies AI PS DD HV3, L 7462-M, Edition 2, 28.11.2003
IGBT Chip in NPT-technology
FEATURES:
600V NPT technology
100μm chip
short circuit prove
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
IGBT-Modules
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-A4694-
A001
SIGC81T60NC
600V
100A
8.99 x 8.99 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
8.99 x 8.99
Area total / active
80.82 / 72.6
Emitter pad size
8x( 1.77x2.82 )
Gate pad size
0.78 x 1.51
mm
2
Thickness
100
μm
Wafer size
150
mm
Flat position
90
deg
Max.possible chips per wafer
169
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al,
≤
500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC81T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient |
| SIGC84T120R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC84T120R3 WAF | 制造商:Infineon Technologies AG 功能描述: |
| SIGC84T120R3L | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC84T120R3LZJ | 功能描述:MOSFET CHIPLIEFERUNGEN RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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