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參數(shù)資料
| 型號(hào)： | SIGC81T120R2CL |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴(kuò)散核武器條約IGBT芯片技術(shù) |
| 文件頁數(shù)： | 1/4頁 |
| 文件大?。?/td> | 78K |
| 代理商： | SIGC81T120R2CL |
SIGC81T120R2CL
Edited by INFINEON Technologies AI PS DD HV3, L 7161-P, Edition 2, 03.09.2003
IGBT Chip in NPT-technology
FEATURES:
1200V NPT technology 180μm chip
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
integrated gate resistor
Chip Type
This chip is used for:
power module
BSM50GD120DLC
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67041-
A4700-A001
SIGC81T120R2CL 1200V
50A
9.08 X 8.98 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
9.08 X 8.98
Emitter pad size
8 x ( 2.6 x 1.78 )
Gate pad size
1.46 x 0.8
Area total / active
81.5 / 63.5
mm
2
Thickness
180
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
167 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm Al Si 1%
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC81T120R2CS | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC81T60NC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology |
| SIGC81T60SNC | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology positive temperature coefficient |
| SIGC84T120R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC84T120R3 WAF | 制造商:Infineon Technologies AG 功能描述: |
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