參數資料
型號: SIGC158T120R3
廠商: INFINEON TECHNOLOGIES AG
英文描述: IGBT3 Chip
中文描述: IGBT3芯片
文件頁數: 1/4頁
文件大?。?/td> 89K
代理商: SIGC158T120R3
SIGC158T120R3
Edited by INFINEON Technologies AI PS DD HV3, L7691A, Edition 2, 04.09.2003
IGBT
3
Chip
FEATURES:
1200V Trench + Field Stop technology
low turn-off losses
short tail current
positive temperature coefficient
easy paralleling
Chip Type
This chip is used for:
power module
Applications:
drives
G
C
E
V
CE
I
Cn
Die Size
Package
Ordering Code
Q67050-
A4109-A001
SIGC158T120R3
1200V 150A 12.56 x 12.56 mm
2
sawn on foil
MECHANICAL PARAMETER:
Raster size
12.56 x 12.56
Emitter pad size
8x(2.646 x 5.454)
Gate pad size
1.139 x 1.139
mm
Area total / active
157.8 / 128.1
mm
2
Thickness
140
μm
Wafer size
150
mm
Flat position
90
grd
Max.possible chips per wafer
86 pcs
Passivation frontside
Photoimide
Emitter metallization
3200 nm AlSiCu
Collector metallization
1400 nm Ni Ag –system
suitable for epoxy and soft solder die bonding
Die bond
electrically conductive glue or solder
Wire bond
Al, <500μm
Reject Ink Dot Size
0.65mm ; max 1.2mm
Recommended Storage Environment
store in original container, in dry nitrogen,
< 6 month at an ambient temperature of 23°C
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相關代理商/技術參數
參數描述
SIGC158T120R3L 功能描述:IGBT 晶體管 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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SIGC15T60 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip
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SIGC15T60UN 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:High Speed IGBT Chip in NPT-technology positive temperature coefficient