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參數(shù)資料
| 型號： | SIGC156T60NR2C |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | IGBT Chip in NPT-technology |
| 中文描述： | 在不擴散核武器條約IGBT芯片技術 |
| 文件頁數(shù)： | 2/4頁 |
| 文件大?。?/td> | 77K |
| 代理商： | SIGC156T60NR2C |
SIGC156T60NR2C
Edited by INFINEON Technologies AI PS DD HV3, L 7282-M, Edition 2, 28.11.2003
MAXIMUM RATINGS
:
Parameter
Symbol
Value
Unit
Collector-emitter voltage,
T
j=25
°
C
V
CE
600
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
cpuls
600
A
Gate emitter voltage
V
GE
±
20
V
Operating junction and storage temperature
T
j
, T
stg
-55 ... +150
°C
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS
(tested on chip),
T
j=25
°
C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V, I
C
=5mA
600
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=200A
1.7
2
2.5
Gate-emitter threshold voltage
V
GE(th)
I
C
=4mA, V
GE
=V
CE
4.5
5.5
6.5
V
Zero gate voltage collector current
I
CES
V
CE
=600V, V
GE
=0V
13.6
μA
Gate-emitter leakage current
I
GES
V
CE
=0V, V
GE
=20V
600
nA
Integrated gate resistor
DYNAMIC CHARACTERISTICS
(tested at component):
R
Gint
5
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
(tested at component)
,
Inductive Load:
C
iss
C
oss
C
rss
-
-
-
9000
tbd
800
-
-
-
V
CE
=25V
V
GE
=0V
f
=1MHz
pF
Value
typ.
Parameter
Symbol
Conditions
1)
min.
max.
Unit
Turn-on delay time
t
d(on)
-
180
-
Rise time
t
r
-
49
-
Turn-off delay time
t
d(off)
-
285
-
Fall time
t
f
T
j
=125
°
C
V
CC
=300V
I
C
=200A
V
GE
=
±
15V
R
G
=1,5
-
41
-
ns
1)
values also influenced by parasitic L- and C- in measurement and package.
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相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SIGC156T60SNR2C | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT Chip in NPT-technology 600V NPT technology 100μm chip |
| SIGC158T120R3 | 功能描述:IGBT 模塊 1200V 150A IGBT RoHS:否 制造商:Infineon Technologies 產品:IGBT Silicon Modules 配置:Dual 集電極—發(fā)射極最大電壓 VCEO:600 V 集電極—射極飽和電壓:1.95 V 在25 C的連續(xù)集電極電流:230 A 柵極—射極漏泄電流:400 nA 功率耗散:445 W 最大工作溫度:+ 125 C 封裝 / 箱體:34MM 封裝: |
| SIGC158T120R3L | 功能描述:IGBT 晶體管 IGBT RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SIGC158T170R3 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
| SIGC15T60 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:IGBT3 Chip |
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