參數(shù)資料
型號(hào)： SIGC156T120R2C
廠商： INFINEON TECHNOLOGIES AG
英文描述： IGBT Chip in NPT-technology
中文描述： 在不擴(kuò)散核武器條約IGBT芯片技術(shù)
文件頁(yè)數(shù)： 2/4頁(yè)
文件大小： 75K
代理商： SIGC156T120R2C
SIGC156T120R2C
Edited by INFINEON Technologies AI PS DD HV3, L 7181-M, Edition 2, 03.09.2003
MAXIMUM RATINGS
:
Parameter
Symbol
Value
Unit
Collector-emitter voltage,
T
j=25
°
C
V
CE
1200
V
DC collector current, limited by T
jmax
I
C
1 )
A
Pulsed collector current, t
p
limited by T
jmax
I
cpuls
300
A
Gate emitter voltage
V
GE
±
20
V
Operating junction and storage temperature
T
j
, T
stg
-55 ... +150
°C
1 )
depending on thermal properties of assembly
STATIC CHARACTERISTICS (tested on chip)
,
T
j=25
°
C, unless otherwise specified:
Value
Parameter
Symbol
Conditions
min.
typ.
max.
Unit
Collector-emitter breakdown voltage
V
(BR)CES
V
GE
=0V , I
C
=5mA
1200
Collector-emitter saturation voltage
V
CE(sat)
V
GE
=15V, I
C
=100A
2.0
2.5
3.0
Gate-emitter threshold voltage
V
GE(th)
I
C
=4mA , V
GE
=V
CE
4.5
5.5
6.5
V
Zero gate voltage collector current
I
CES
V
CE
=1200V , V
GE
=0V
600
μA
Gate-emitter leakage current
I
GES
V
CE
=0V , V
GE
=20V
600
nA
Integrated gate resistor
ELECTRICAL CHARACTERISTICS
(tested at component):
R
Gint
5
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
Input capacitance
Output capacitance
Reverse transfer capacitance
SWITCHING CHARACTERISTICS
(tested at component), Inductive Load
C
iss
C
oss
C
rss
-
-
-
6.5
1
0.5
-
-
-
V
CE
=25V,
V
GE
=0V,
f
=1MHz
nF
Value
typ.
Parameter
Symbol
Conditions
1)
min.
max.
Unit
Turn-on delay time
t
d(on)
-
160
320
Rise time
t
r
-
80
160
Turn-off delay time
t
d(off)
-
400
520
Fall time
t
f
T
j
=125
°
C
V
CC
=600V,
I
C
=100A,
V
GE
=+15/ -15V,
R
G
=6.8
-
70
100
ns
1)
values also influenced by parasitic L- and C- in measurement and package.
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參數(shù)描述
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