參數(shù)資料
型號(hào): SI7940DP
廠商: Vishay Intertechnology,Inc.
英文描述: Dual N-Channel 12-V (D-S) MOSFET
中文描述: 雙N溝道12 V的(副)MOSFET的
文件頁(yè)數(shù): 4/5頁(yè)
文件大?。?/td> 55K
代理商: SI7940DP
Si7940DP
Vishay Siliconix
New Product
www.vishay.com
4
Document Number: 71845
S-21167
Rev. B, 29-Jul-02
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
10
- 3
10
- 2
1
10
600
10
- 1
10
- 4
100
0
24
40
8
16
P
Single Pulse Power
Time (sec)
32
-0.6
-0.4
-0.2
-0.0
0.2
0.4
-50
-25
0
25
50
75
100
125
150
I
D
= 250 A
2
1
0.1
0.01
0.2
0.1
0.05
0.02
Single Pulse
Duty Cycle = 0.5
Threshold Voltage
V
V
G
T
J
- Temperature ( C)
Normalized Thermal Transient Impedance, Junction-to-Ambient
Square Wave Pulse Duration (sec)
N
T
1. Duty Cycle, D =
2. Per Unit Base = R
thJA
= 60 C/W
3. T
JM
- T
A
= P
DM
Z
thJA(t)
4. Surface Mounted
t
1
t
2
t
1
t
2
Notes:
P
DM
100
600
0.1
0.01
1
10
Safe Operating Area, Junction-To-Ambient
V
DS
- Drain-to-Source Voltage (V)
100
1
0.1
1
10
100
0.01
10
T
= 25 C
Single Pulse
-
I
D
10 s
dc
0.1
I
Limited
I
Limited
r
DS(on)
Limited
BV
DSS
Limited
1 s
100 ms
10 ms
1 ms
相關(guān)PDF資料
PDF描述
SI7945DP Dual P-Channel 30-V (D-S) MOSFET VGS= ± 20V; TrenchFET® Power MOSFET
SI7958DP Dual N-Channel 40-V (D-S) MOSFET
SI7991DP Dual P-Channel 30-V (D-S) MOSFET
SI7991DP-T1 Dual P-Channel 30-V (D-S) MOSFET
SI8251 DIGITAL POWER CONTROLLER
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SI7940DP-T1-E3 功能描述:MOSFET 12V 11.8A 0.017Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7940DP-T1-GE3 功能描述:MOSFET Dual P-Ch 12V 17mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7941DP 制造商:VISHAY 制造商全稱(chēng):Vishay Siliconix 功能描述:Dual P-Channel 30-V (D-S) MOSFET
SI7941DP-T1 功能描述:MOSFET 30V 9.0A 1.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
SI7941DP-T1-E3 功能描述:MOSFET 30V 9.0A 1.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導(dǎo)通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube