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參數(shù)資料
| 型號： | SI7940DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 英文描述： | Dual N-Channel 12-V (D-S) MOSFET |
| 中文描述： | 雙N溝道12 V的（副）MOSFET的 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大小： | 55K |
| 代理商： | SI7940DP |
Si7940DP
Vishay Siliconix
New Product
www.vishay.com
2
Document Number: 71845
S-21167
—
Rev. B, 29-Jul-02
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.6
1.5
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8 V
100
nA
V
DS
= 9.6 V, V
GS
= 0 V
1
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 9.6 V, V
GS
= 0 V, T
J
= 55 C
5 V, V
GS
= 4.5
V
5
A
On-State Drain Current
a
I
D(on)
V
DS
20
A
V
GS
= 4.5
V, I
D
= 11.8 A
0.014
0.017
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 2.5 V, I
D
= 9.8 A
0.020
0.025
Forward Transconductance
a
g
fs
V
DS
= 5 V, I
D
= 11.8 A
32
S
Diode Forward Voltage
a
V
SD
I
S
= 2.9 A, V
GS
= 0 V
0.77
1.2
V
Dynamic
b
Total Gate Charge
Q
g
11.5
17
Gate-Source Charge
Q
gs
V
DS
= 6 V,
V
GS
= 4.5 V, I
D
= 11.8 A
3.2
nC
Gate-Drain Charge
Q
gd
2.5
Turn-On Delay Time
t
d(on)
30
45
Rise Time
t
r
V
= 6 V, R
= 6
1 A, V
GEN
= 4.5 V, R
G
= 6
50
75
Turn-Off Delay Time
t
d(off)
I
D
60
90
ns
Fall Time
t
f
25
40
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.9 A, di/dt = 100 A/ s
40
80
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
0
4
8
12
16
20
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
V
GS
= 5 thru 2.5 V
T
C
= 125 C
-55 C
2 V
25 C
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
1.5 V
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