- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄368619 > Si7888DP (Vishay Intertechnology,Inc.) Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode PDF資料下載
參數(shù)資料
| 型號： | Si7888DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| 中文描述： | 雙N溝道30 V的（副）MOSFET的肖特基二極管 |
| 文件頁數(shù)： | 2/5頁 |
| 文件大?。?/td> | 45K |
| 代理商： | SI7888DP |
Si7888DP
Vishay Siliconix
www.vishay.com
2
Document Number: 71876
S-31727—Rev. B, 18-Aug-03
MOSFET SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= 250 A
0.80
2
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
20 V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= 24 V, V
GS
= 0 V
1
A
V
DS
= 24 V, V
GS
= 0 V, T
J
= 70 C
5
On-State Drain Current
a
I
D(on)
V
DS
5 V, V
GS
= 10
V
50
A
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= 10
V, I
D
= 12.4 A
0.010
0.012
V
GS
= 4.5 V, I
D
= 9.6 A
0.016
0.020
Forward Transconductance
a
g
fs
V
DS
= 15 V, I
D
= 12.4 A
27
S
Diode Forward Voltage
a
V
SD
I
S
= 2.6 A, V
GS
= 0 V
0.75
1.2
V
Dynamic
b
Total Gate Charge
Q
g
8.7
10.5
Gate-Source Charge
Q
gs
V
DS
= 15 V,
V
GS
= 5.0 V, I
D
= 12.4 A
2.4
nC
Gate-Drain Charge
Q
gd
3.5
Gate Resistance
R
g
0.2
1
1.5
Turn-On Delay Time
t
d(on)
10
20
Rise Time
t
r
V
= 15 V, R
= 15
1 A, V
GEN
= 10 V, R
G
= 6
11
20
Turn-Off Delay Time
t
d(off)
I
D
24
50
ns
Fall Time
t
f
10
20
Source-Drain Reverse Recovery Time
t
rr
I
F
= 2.6 A, di/dt = 100 A/ s
50
75
Notes
a.
b.
Pulse test; pulse width
300 s, duty cycle
2%.
Guaranteed by design, not subject to production testing.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
2.5
3.0
3.5
4.0
4.5
0
10
20
30
40
50
0
1
2
3
4
V
GS
= 10 thru 4 V
25 C
T
C
= 125 C
2 V
-55 C
3 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SI7892DP | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| Si7892DP-T1 | Dual N-Channel 30-V (D-S) MOSFET with Schottky Diode |
| SI7913DN | Dual P-Channel 20-V (D-S) MOSFET |
| Si7913DN-T1-E3 | Dual P-Channel 20-V (D-S) MOSFET |
| SI7922DN | Dual MOSFET, 100 V; very fast switching performance; |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SI7888DP-T1-E3 | 功能描述:MOSFET 30V 15.7A 5.0W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7888DP-T1-GE3 | 功能描述:MOSFET 30V 15.7A 5.0W 12mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7892ADP-T1-E3 | 功能描述:MOSFET 30V 25A 5.4W 4.2mohm @ 10V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7892BDP | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel, 30-V (D-S) MOSFET |
| SI7892BDP-T1-E3 | 功能描述:MOSFET 30V 25A 0.0042Ohm RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。