參數(shù)資料
型號： Si7913DN-T1-E3
廠商： Vishay Intertechnology,Inc.
元件分類： MOSFETs
英文描述： Dual P-Channel 20-V (D-S) MOSFET
中文描述： 雙P溝道20 - V（下局副局長）MOSFET的
文件頁數(shù)： 1/5頁
文件大?。?/td> 67K
代理商： SI7913DN-T1-E3
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK
Package
APPLICATIONS
Portable
PA Switch
Battery Switch
Load Switch
RoHS
COMPLIANT
Si7913DN
Vishay Siliconix
Document Number: 72615
S-51129—Rev. B, 13-Jun-05
www.vishay.com
1
Dual P-Channel 20-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
0.037 @ V
GS
=
4.5 V
7.4
20
0.048 @ V
GS
=
2.5 V
6.5
0.066 @ V
GS
=
1.8 V
5.5
1
2
3
4
5
6
7
8
S1
G1
S2
G2
D1
D1
D2
D2
3.30 mm
3.30 mm
Bottom View
PowerPAK 1212-8
Ordering Information: Si7913DN-T1—E3 (Lead (Pb)-Free)
S
G
D
P-Channel MOSFET
S
G
D
P-Channel MOSFET
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
20
V
Gate-Source Voltage
V
GS
8
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
7.4
5.0
T
A
= 85 C
5.3
3.6
A
Pulsed Drain Current
I
DM
20
continuous Source Current (Diode Conduction)
a
I
S
2.3
1.1
Maximum Power Dissipation
a
T
A
= 25 C
P
D
2.8
1.3
W
T
A
= 85 C
1.5
0.85
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
Soldering Recommendations (Peak Temperature)
b,c
260
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
35
44
Steady State
75
94
C/W
Maximum Junction-to-Case
Steady State
R
thJC
4
5
Notes
a.
b.
Surface Mounted on 1” x 1” FR4 Board.
http://www.vishay.com/doc73257
adequate bottom side solder interconnection.
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相關代理商/技術參數(shù)
參數(shù)描述
SI7913DN-T1-E3/BKN 制造商:Vishay Siliconix 功能描述:DUAL P-CHANNEL 20-V (D-S) MOSFET
SI7913DN-T1-GE3 功能描述:MOSFET Dual P-Ch 20V 37mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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