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參數(shù)資料
| 型號(hào)： | SI7445DP |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類(lèi)： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長(zhǎng)）MOSFET的低閾值 |
| 文件頁(yè)數(shù)： | 2/4頁(yè) |
| 文件大?。?/td> | 41K |
| 代理商： | SI7445DP |
Si7445DP
Vishay Siliconix
www.vishay.com
2
Document Number: 71626
S-31728—Rev. B, 18-Aug-03
SPECIFICATIONS (T
J
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
Test Condition
Min
Typ
Max
Unit
Static
Gate Threshold Voltage
V
GS(th)
V
DS
= V
GS
, I
D
= -250 A
-0.45
V
Gate-Body Leakage
I
GSS
V
DS
= 0 V, V
GS
=
8
V
100
nA
Zero Gate Voltage Drain Current
I
DSS
V
DS
= -16 V, V
GS
= 0 V
-1
A
V
DS
= -16 V, V
GS
= 0 V, T
J
= 70 C
-10
On-State Drain Current
a
I
D(on)
V
DS
-5 V, V
GS
= -4.5 V
-40
A
V
GS
= -4.5 V, I
D
= -19 A
0.0064
0.0077
Drain-Source On-State Resistance
a
r
DS(on)
V
GS
= -2.5 V, I
D
= -17 A
0.0078
0.0094
V
GS
= -1.8 V, I
D
= -10 A
0.0105
0.0125
Forward Transconductance
a
g
fs
V
DS
= -15
V, I
D
= -19 A
75
S
Diode Forward Voltage
a
V
SD
I
S
= -4.3 A, V
GS
= 0 V
-0.65
-1.1
V
Dynamic
b
Total Gate Charge
Q
g
92
140
Gate-Source Charge
Q
gs
V
DS
= -15 V,
V
GS
= -5 V, I
D
= -19 A
19
nC
Gate-Drain Charge
Q
gd
16.5
Gate-Resistance
R
g
1
2
3.4
Turn-On Delay Time
t
d(on)
40
60
Rise Time
t
r
V
= -15 V, R
= 15
-1 A, V
GEN
= -4.5 V, R
G
= 6
45
65
Turn-Off Delay Time
t
d(off)
I
D
400
600
ns
Fall Time
t
f
190
290
Source-Drain Reverse Recovery Time
t
rr
I
F
= -4.3 A, di/dt = 100 A/ s
50
80
Notes
a.
b.
Pulse test; pulse width
Guaranteed by design, not subject to production testing.
300 s, duty cycle
2%.
TYPICAL CHARACTERISTICS (25 C UNLESS NOTED)
0
10
20
30
40
50
0.0
0.5
1.0
1.5
2.0
0
10
20
30
40
50
0
2
4
6
8
10
V
GS
= 5 thru 2 V
25 C
T
C
= 125 C
-55 C
1.5 V
Output Characteristics
Transfer Characteristics
V
DS
- Drain-to-Source Voltage (V)
-
I
D
V
GS
- Gate-to-Source Voltage (V)
-
I
D
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| SI7445DP-T1 | 功能描述:MOSFET 20V 19A 5.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7445DP-T1-E3 | 功能描述:MOSFET 20V 19A 5.4W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7445DP-T1-E3 | 制造商:Vishay Siliconix 功能描述:MOSFET |
| SI7445DP-T1-GE3 | 功能描述:MOSFET 20V 19A 5.4W 7.7mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7446BDP-T1-E3 | 功能描述:MOSFET 30V 19A 1.9W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
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