- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄365554 > SI7411DN-T1-E3 (Vishay Intertechnology,Inc.) P-Channel 20-V (D-S) MOSFET, Low-Threshold PDF資料下載
參數(shù)資料
| 型號： | SI7411DN-T1-E3 |
| 廠商： | Vishay Intertechnology,Inc. |
| 元件分類： | MOSFETs |
| 英文描述： | P-Channel 20-V (D-S) MOSFET, Low-Threshold |
| 中文描述： | P通道20 - V（下局副局長）MOSFET的低閾值 |
| 文件頁數(shù)： | 1/5頁 |
| 文件大小： | 56K |
| 代理商： | SI7411DN-T1-E3 |
FEATURES
TrenchFET Power MOSFET
New Low Thermal Resistance PowerPAK Package
with Low 1.07-mm Profile
PWM Optimized for Fast Switching
100% R
g
Tested
APPLICATIONS
Primary Side Switch for 24-V DC/DC Applications
Secondary Synchronous Rectifier
Si7370DP
Vishay Siliconix
Document Number: 71874
S-41262—Rev. D, 05-Jul-04
www.vishay.com
1
N-Channel 60-V (D-S) MOSFET
PRODUCT SUMMARY
V
DS
(V)
r
DS(on)
( )
I
D
(A)
60
0.011 @ V
GS
= 10 V
0.013 @ V
GS
= 6 V
15.8
14.5
1
2
3
4
5
6
7
8
S
S
S
G
D
D
D
D
6.15 mm
5.15 mm
PowerPAK SO-8
Bottom View
Si7370DP-T1
Si7370DP-T1—E3 (Lead (Pb)-Free)
N-Channel MOSFET
G
D
S
Ordering Information:
ABSOLUTE MAXIMUM RATINGS (T
A
= 25 C UNLESS OTHERWISE NOTED)
Parameter
Symbol
10 secs
Steady State
Unit
Drain-Source Voltage
V
DS
60
V
Gate-Source Voltage
V
GS
20
Continuous Drain Current
(T
J
= 150 C)
a
T
A
= 25 C
I
D
15.8
9.6
T
A
= 70 C
12.6
7.7
Continuous Source Current
I
S
4.7
1.7
A
Pulsed Drain Current
I
DM
50
Avalanche Current
I
AS
50
Single Avalanche Energy
E
AS
125
mJ
Maximum Power Dissipation
T
A
= 25 C
P
D
5.2
1.9
W
T
A
= 70 C
3.3
1.25
Operating Junction and Storage Temperature Range
T
J
, T
stg
55 to 150
C
THERMAL RESISTANCE RATINGS
Parameter
Symbol
Typical
Maximum
Unit
Maximum Junction-to-Ambient
t A bi
a
t
10 sec
R
thJA
19
24
Steady State
52
65
C/W
Maximum Junction-to-Case (Drain)
Steady State
R
thJC
1.5
1.8
Notes
a.
Surface Mounted on 1” x 1” FR4 Board.
相關PDF資料 |
PDF描述 |
|---|---|
| SI7370DP | N-Channel 60-V (D-S) MOSFET |
| SI7388DP | N-Channel Reduced Qg, Fast Switching MOSFET |
| SI7390DP | N-Channel 30-V (D-S) Fast Switching WFET |
| SI7390DP-T1 | N-Channel 30-V (D-S) Fast Switching WFET |
| SI7390DP-T1-E3 | N-Channel 30-V (D-S) Fast Switching WFET |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SI7411DN-T1-GE3 | 功能描述:MOSFET 20V 11.4A 3.6W 19mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7413DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:P-Channel 20-V (D-S) MOSFET |
| SI7413DN-T1-E3 | 功能描述:MOSFET 20V 13.2A 3.8W RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7413DN-T1-GE3 | 功能描述:MOSFET 20V 13.2A 3.8W 15mohm @ 4.5V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| SI7414DN | 制造商:VISHAY 制造商全稱:Vishay Siliconix 功能描述:N-Channel 60-V (D-S) MOSFET |
發(fā)布緊急采購，3分鐘左右您將得到回復。